Latest Research in GaN-based semiconductor devices and materials
121 research papers · 2026 median publication year
Top Research Topics in GaN-based semiconductor devices and materials
- GaN-based semiconductor devices and materials — 32 papers
- Instrumentation and Detectors — 8 papers
- Materials Science — 8 papers
- Silicon Carbide Semiconductor Technologies — 7 papers
- Diamond and Carbon-based Materials Research — 6 papers
- Quantum Physics — 5 papers
- Mesoscale and Nanoscale Physics — 5 papers
- Optics — 3 papers
- Radiation Effects in Electronics — 3 papers
- Particle Detector Development and Performance — 2 papers
Highest-Cited Papers
- Resolving Lateral Heat Transport in GaN‐on‐SiC HEMT Structures via Transient Thermometry
- Mode-Engineered Metal Microheaters for Low-Loss Nonvolatile Phase-Change Photonics
- Observation of Electron Spin Dynamics on Hundreds-of-Microseconds Timescales in High-Field Magic Angle Spinning EPR
- Composite Crystalline Aluminum Nitride Passivation for Near-Junction Thermal Management in Gallium Nitride High-Electron-Mobility Transistors
- Simulation of gain suppression dynamics in low gain avalanche detectors (LGAD): coupling avalanche multiplication with multi-body Coulomb interaction
- Multi‐Objective Inverse Design of a Dual‐Narrowband Thermal Emitter for Optical Gas Sensing
- Evaluation of the adaptive nested mesh approach for simulating charge pulse shapes in planar silicon detectors irradiated by heavy ions
- Fast-Neutron Irradiation Effect in Heteroepitaxial $β$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates
- Strain‐Driven Monolithic Nanowire LEDs for Pixel‐Level Color Control in High‐Resolution Displays
- Spectral Matching and Spatially Dependent Polarization‐Selective Attenuation in Chiral Au‐SiO 2 ‐Quantum Dot Nanohybrids
- Fabrication and Electrophysical–Spectrometric Characterization of a Large-Area Si(Li) Detector for Alpha-Particle Detection
- Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering
- Charge-Carrier transport simulations in diamond detectors with electric-field-dependent mobility and charge-collection-distance-based trapping
- Silicon Senescence: Gompertz Mortality in a Fielded GPU Population
- Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse
- 100 nm Gate-Length N-Polar GaN/AlGaN Metal-Oxide-Semiconductor High Electron Mobility Transistor on a Si Substrate via Thin-Layer Transfer Technique
- Hybrid Multimodal Switching Analytical Model of GaN HEMTs in Dual‐Buck Symmetrical Half‐Bridge Converter
- Engineering and Probing a One-Dimensional Dipolar Spin Ensemble in Diamond
- 1.5 × 1.5 μm2GaN green micro-LEDs fabricated using high-rate neutral beam etching exhibited 32% external quantum efficiency.
- Light-Matter Interaction in Nano Systems: Fundamentals and Applications