1.5 × 1.5 μm2GaN green micro-LEDs fabricated using high-rate neutral beam etching exhibited 32% external quantum efficiency.

micro-LED fabricated at an etching rate of 12.1 nm/min exhibited a record-high maximum external quantum efficiency of 32%. This result represents a significant step toward establishing the NBE technique as a mass-production process for GaN micro-LEDs down to the micron-size range.

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Publication Details

Journal
PubMed
Published
2026-09-15
DOI
https://doi.org/10.1364/ol.610103
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

1.5 × 1.5 μm2GaN green micro-LEDs fabricated using high-rate neutral beam etching exhibited 32% external quantum efficiency.

Daisuke Ohori, Seiji Samukawa, Xuelun Wang
PubMed
GaN-based semiconductor devices and materials
article

1.5 × 1.5 μm2GaN green micro-LEDs fabricated using high-rate neutral beam etching exhibited 32% external quantum efficiency.

Daisuke Ohori, Seiji Samukawa, Xuelun Wang
article en

Abstract

micro-LED fabricated at an etching rate of 12.1 nm/min exhibited a record-high maximum external quantum efficiency of 32%. This result represents a significant step toward establishing the NBE technique as a mass-production process for GaN micro-LEDs down to the micron-size range.

PubMedVol. 51(18)
Affordable and clean energy
Openalex Percentile: Top 16%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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1.5 × 1.5 μm2GaN green micro-LEDs fabricated using high-rate neutral beam etching exhibited 32% external quantum efficiency. — Daisuke Ohori, Seiji Samukawa, et al. · PubMed (2026) | TGRS Research Map | TGRS