Hybrid Multimodal Switching Analytical Model of GaN HEMTs in Dual‐Buck Symmetrical Half‐Bridge Converter

ABSTRACT Gallium nitride high electron mobility transistors (GaN HEMTs) exhibit pronounced high‐frequency switching oscillations, which constitute the primary noise source within the dual buck symmetrical half‐bridge converter (DBSHBC). Traditional GaN HEMT switching analysis models, constrained by simplified current loop structures, struggle to characterize the complex multimode switching dynamics induced by the interleaved bias loops, output loops, and stray loop coupling within DBSHBC. To enhance modeling accuracy, this study incorporates nonlinear parasitic parameters and PCB parasitic effects. Based on mode‐transition boundaries formed by multiloop current cross‐conduction, a hybrid multimode circuit‐level switching analysis model for GaN HEMTs in DBSHBC is established. Detailed analysis of the equivalent circuits and mathematical models for device turn‐on and turn‐off processes under various operating conditions enabled prediction of switching waveform within a single switching cycle. The influence mechanism of parasitic parameter variations on switching transient noise was investigated. The accuracy of the proposed model was validated by comparing the predicted switching waveforms with PSPICE simulation results and experimental waveforms.