Latest Research in Ferroelectric and Negative Capacitance Devices

Top Research Topics in Ferroelectric and Negative Capacitance Devices

• Ferroelectric and Negative Capacitance Devices — 5 papers
• 2D Materials and Applications — 3 papers
• Mesoscale and Nanoscale Physics — 2 papers
• Advanced Memory and Neural Computing — 2 papers
• Phase-change materials and chalcogenides — 1 papers
• Quantum-Dot Cellular Automata — 1 papers
• Multiferroics and related materials — 1 papers
• Organic and Molecular Conductors Research — 1 papers
• Ga2O3 and related materials — 1 papers
• Transition Metal Oxide Nanomaterials — 1 papers

Highest-Cited Papers

1. Spatiotemporal Programming via Asymmetric Dielectric Engineering for Nonvolatile 2D Optoelectronics
2. Self‐Limited Switching Femtojoule‐Class RESET Energy Estimate in Deep‐Confine in‐Doped Sb 2 Te 3 Phase‐Change Memory
3. Graphene-based Photodetector with Engineered Hot-Carrier Cooling Dynamics
4. Neutron-Induced Defect-Driven Degradation of Ferroelectric Memory and Neuromorphic Synapses in α-In2Se3 FeS-FETs
5. A self-compliant selector-free memory with functional bismuth ferrite
6. Spatiotemporal programming via asymmetric dielectric engineering for nonvolatile 2D optoelectronics
7. Toward the Rational Design of Molecular Field-Coupled Nanocomputing Candidates
8. Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory
9. Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO3/PMN-PT Heterostructures
10. Confined conduction channels near a metal-insulator transition
11. Bias-Tunable Dual-Mode Optoelectronic Device Based on a SiC/β-Ga2O3 Heterojunction for Photodetection and Optical Synapse
12. Near‐Field Nanoimaging of Programmable Phase Transitions in Ga + ‐Irradiated VO 2
13. High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf0.5Zr0.5O2 capacitors
14. 2D Ferroelectrics: Toward Non‐Volatile Memory and Neuromorphic Computing
15. STEMPix: A Phase-Transition-Material-Based Pixel Sensor for Resolving Edge-Movement Direction
16. Mobile-Ion-Induced Transient NDR in MoS2 FETs: Optimization Insights and Figures of Merit via Compact Modeling
17. Van Der Waals Spintronics Toward Neuromorphic Computing
18. Toward next-generation computing through ferroelectricity
19. Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications
20. Electroforming‐Free, Self‐Rectifying Selector‐Only Memory With Diffusive Cu‐Ion Dynamics for Logic‐In‐Memory Computing