Toward next-generation computing through ferroelectricity

Ferroelectric materials offer electrically switchable, non-volatile polarization as a physical state variable for computing. In thin films, polarization can be engineered to control charge transport, interfacial barriers, and conductance, enabling memory and computation to converge within compact devices. This Review examines how ferroelectric physics translates into emerging device functions and computing-specific implementations, outlining design principles for reliable, scalable, energy-efficient, and monolithically integrated next-generation hardware.