Latest Research in Ferroelectric and Negative Capacitance Devices

Top Research Topics in Ferroelectric and Negative Capacitance Devices

• Ferroelectric and Negative Capacitance Devices — 14 papers
• 2D Materials and Applications — 7 papers
• Materials Science — 5 papers
• Mesoscale and Nanoscale Physics — 3 papers
• Semiconductor materials and devices — 2 papers
• Synthesis and Properties of Aromatic Compounds — 1 papers
• Ferroelectric and Piezoelectric Materials — 1 papers
• Transition Metal Oxide Nanomaterials — 1 papers
• Strongly Correlated Electrons — 1 papers
• Ga2O3 and related materials — 1 papers

Highest-Cited Papers

1. Stacking Offset Significantly Enhances the Magnetic-Field Modulation of Charge Transfer Spin States in Isomeric Organic Crystals
2. Low-Temperature Plasma-Induced Oxygen-Vacancy Engineering Enables Orthorhombic-Phase Stabilization in Hf0.5Zr0.5O2 for 2D FeFETs toward Monolithic 3D Integration
3. Thermosensitive Elastic Depinning Kinetics in Ultrathin Ferroelectric Hf x Zr 1−x O 2 Films for Self‐Revoking Cryogenic Memory
4. Giant Ferroelectric Domain Wall Conductance in MoS2/PbTiO3 Heterostructure for High-Density Memory
5. Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
6. Plasma-modulated hafnium zirconium oxide nanolaminate capacitors with enhanced ferroelectric polarization and reliability
7. Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction
8. Self-balancing luminescence kinetics of charged excitons in WS$_2$ monolayer
9. Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors
10. Effect of Plasma Excitation Mode on Rutile TiO2 MIM Capacitors Grown on RuO2 Seed Electrodes
11. In-Sensor Visible and Mid-Infrared Dual-Band Perception and Computing
12. HZO thickness-dependent charge loss mechanisms in HfO2-based MIFIS FeFETs
13. Biaxial ferroelectric-polarization reconfigured optoelectronic multiple logic in α-In2Se3/WSe2 heterostructure
14. Band-Saddle-Point Engineering in Mixed $A$-site $A$V$_3$Sb$_5$ Kagome Metals
15. Polarity Reversal of Dipole at the SiO2/HZO Interface in Ferroelectric Field-Effect Transistors by Oxygen Scavenging of TiN
16. Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics
17. Two-dimensional digital-analog multimode circuits based on asymmetric vertical double-gate WSe2 transistors
18. Thickness Scaling of High‐Permittivity HfO 2 /ZrO 2 Superlattice Capacitors With Morphotropic Phase Boundary
19. Light-facilitated ferroelectric switching in wurtzite crystals
20. Origin of peak splitting in polydomain Hf0.5Zr0.5O2 ferroelectric capacitors