Complementary Resistive Switching and IMPLY Logic Operations in Single Active Switching Material Standalone Memristive Devices

Complementary resistive switches (CRSs) are promising for nonvolatile memory, logic computing, and in-memory computing, but conventional implementations typically require two anti-serial memristive units, increasing device count and integration complexity. Here, the large surface-to-volume ratio of Ga2O3 nanowires is exploited to generate strong surface depletion effects. Coupled depletion regions between laterally bridged nanowires form an effective back-to-back depletion configuration, enabling complementary resistive switching in a single active switching material standalone memristive device. A Linear Technology Simulation Program with Integrated Circuit Emphasis (LTSpice) model is further developed to reproduce the measured electrical characteristics and verify Implies (IMPLY) logic operations, offering a compact route toward wide-bandgap oxide memristive logic, in-memory computing, and future electronics applications.