Bibliometric Analysis of Global Research Trends on Simulation Studies of AlGaN/GaN High-Electron-Mobility Transistors Using the Scopus Database

Abstract As the design space of AlGaN/GaN high-electron-mobility transistors (HEMTs) grows increasingly complex, simulation has become an indispensable tool for understanding device physics and optimizing performance before fabrication. However, few studies have measured and analyzed the scientific publications on AlGaN/GaN HEMT simulation from a global perspective. In this bibliometric study, our aim was to evaluate the global research trends in AlGaN/GaN HEMT simulation areas based on publication outputs, co-authorships among countries, and co-occurrences of author keywords. Using the Scopus database, a total of 4,492 journal articles and conference papers published between 1997 and 2026 were retrieved and analyzed using VOSviewer. Results have shown that since 2001, the number of publications has increased steadily, with the highest annual output recorded in 2025 (490 articles), resulting in a steady increase in the cumulative total publications. China (1,284 articles) and India (961 articles) are the leading contributors, followed by the USA (695 articles); however, Belgium, the UAE, and Singapore exhibit the highest rates of international collaboration. A keyword co-occurrence analysis of 61 keywords revealed six distinct thematic clusters, dominated by power/thermal management, device/HEMT core, modeling/RF, TCAD/gate, electric field, and machine learning. The most recently active keywords include TCAD simulation, gate leakage current, power amplifier, and S-parameter, suggesting a growing emphasis on simulation-driven design and RF performance in recent years. In conclusion, recent progress in AlGaN/GaN HEMT simulation research includes the following (but not limited to): (i) integration of advanced TCAD and physics-based models for trap dynamics and self-heating; (ii) AI-driven and machine learning approaches for device modeling; and (iii) continued exploration of p-GaN gate and enhancement-mode structures for high-power and high-frequency applications.