In-situ Probabilistic Sampling using Field-free Spin-orbit Devices with Markov Property

Abstract Markov chain Monte Carlo (MCMC) sampling uses stochastic updates to sample a target probability distribution and is widely used in scientific computing. Spintronic probabilistic bits (p-bits) provide intrinsic stochasticity, but devices with low energy barriers lack nonvolatile state retention, which complicates in-situ MCMC sampling. Here, we experimentally demonstrate initial-state-dependent stochastic switching in nonvolatile, field-free spin-orbit torque (SOT) devices. The retained magnetic state and the applied pulse amplitude jointly determine the conditional switching probabilities, allowing the devices to operate as conditional probabilistic bits (cp-bits). Micromagnetic simulations provide a qualitative interpretation of the switching mechanism. We then illustrate MCMC sampling through software simulations using an experiment-derived cp-bit model and a modified Metropolis acceptance rule; the sampling was not implemented with an array of physical devices. These results suggest a possible route toward in-memory probabilistic computing that combines state retention with stochastic updates.

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Publication Details

Journal
Chinese Physics B
Published
2026-11-11
DOI
https://doi.org/10.1088/1674-1056/aec08f
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

In-situ Probabilistic Sampling using Field-free Spin-orbit Devices with Markov Property

Zelalem Abebe Bekele, Kun Lei, Xiukai Lan, Kaiyou Wang et al.
Chinese Physics B
Magnetic properties of thin films
article

In-situ Probabilistic Sampling using Field-free Spin-orbit Devices with Markov Property

Zelalem Abebe Bekele, Kun Lei, Xiukai Lan, Kaiyou Wang, Xiangyu Liu
article en

Abstract

Abstract Markov chain Monte Carlo (MCMC) sampling uses stochastic updates to sample a target probability distribution and is widely used in scientific computing. Spintronic probabilistic bits (p-bits) provide intrinsic stochasticity, but devices with low energy barriers lack nonvolatile state retention, which complicates in-situ MCMC sampling. Here, we experimentally demonstrate initial-state-dependent stochastic switching in nonvolatile, field-free spin-orbit torque (SOT) devices. The retained magnetic state and the applied pulse amplitude jointly determine the conditional switching probabilities, allowing the devices to operate as conditional probabilistic bits (cp-bits). Micromagnetic simulations provide a qualitative interpretation of the switching mechanism. We then illustrate MCMC sampling through software simulations using an experiment-derived cp-bit model and a modified Metropolis acceptance rule; the sampling was not implemented with an array of physical devices. These results suggest a possible route toward in-memory probabilistic computing that combines state retention with stochastic updates.

Chinese Physics B
Chinese Academy of Sciences (CN)
Magnetic properties of thin films
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In-situ Probabilistic Sampling using Field-free Spin-orbit Devices with Markov Property — Zelalem Abebe Bekele, Kun Lei, et al. · Chinese Physics B (2026) | TGRS Research Map | TGRS