Vertical GaN Trench MOSFET‐Based Devices for Multifunctional Optoelectronic Logic Gates

ABSTRACT The rapid development of optoelectronic technology has highlighted the potential of optoelectronic hybrid logic circuits in low‐power logic circuits. While two‐dimensional (2D) materials are commonly used in traditional optoelectronics, challenges remain in device stability, mass production, and integration efficiency with existing semiconductor technologies. To meet the demand for high‐performance materials in optoelectronic logic gates (OELGs), this study develops GaN‐based OELGs with high responsivity and low power consumption, aiming to overcome limitations of conventional devices and address future optoelectronic integrated system requirements. Through optimization strategies including trench etching, damage repair and vertical structural design, the developed GaN MOSFETs demonstrate exceptional performance: a responsivity ( R ) of 2.1 × 10 4 A/W, a photo‐to‐dark current ratio (PDCR) exceeding 10 7 , and rapid response speeds ( τ rise / τ fall of 2.0 ms/1.1 ms). The optical communication module validates their feasibility in communication transmission, providing crucial experimental evidence for optoelectronic logic gate research. The successfully developed OELGs operate stably under basic logic states, confirming their viability in next‐generation photonic logic computing circuits. This work demonstrates a proof‐of‐concept GaN trench MOSFET platform for optoelectronic logic operations. It exhibits photogain with millisecond‐scale response and a clear gain–speed trade‐off, showing promising potential for photonic logic circuits and ultraviolet optical signal processing.