Accelerating Temperature-Dependent Optical Response Prediction in Truncated Pyramidal GaN/AlN Quantum Dots via Polynomial Ridge Regression

A polynomial Ridge regression model is proposed to accelerate the prediction of temperature-dependent optical responses in a GaN/AlN truncated-pyramidal quantum dot. Reference transition energies were obtained at four temperatures (0, 100, 300, and 500 K) using a combination of coordinate-transformation and finite-difference methods. Leave-one-temperature-out cross-validation was used to select a second-order model with λ=0.178, yielding an NRMSE of 0.0335 and an R2 of 0.9923. The predictions at 200 and 400 K remain independently unvalidated, whereas comparison with an independent FDM calculation at 600 K gives an absolute transition-energy error of 0.41 meV (0.35%). The reconstructed spectra exhibit the expected temperature-dependent shifts. An inference speed-up of up to 2.66×107 was obtained for three additional temperatures, excluding model training and reference-data generation costs. These predictions have not been independently validated, and the small dataset limits conclusions regarding generalization. The approach is therefore presented as a preliminary surrogate demonstration for the investigated configuration.

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Publication Details

Journal
Nanomaterials
Published
2026-11-08
DOI
https://doi.org/10.3390/nano16211446
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Accelerating Temperature-Dependent Optical Response Prediction in Truncated Pyramidal GaN/AlN Quantum Dots via Polynomial Ridge Regression

Adel Bouazra, Beriham Ibrahim Basha, Fatma Aouaini, Tesnim Brahim
Nanomaterials
GaN-based semiconductor devices and materials
article

Accelerating Temperature-Dependent Optical Response Prediction in Truncated Pyramidal GaN/AlN Quantum Dots via Polynomial Ridge Regression

Adel Bouazra, Beriham Ibrahim Basha, Fatma Aouaini, Tesnim Brahim
article en

Abstract

A polynomial Ridge regression model is proposed to accelerate the prediction of temperature-dependent optical responses in a GaN/AlN truncated-pyramidal quantum dot. Reference transition energies were obtained at four temperatures (0, 100, 300, and 500 K) using a combination of coordinate-transformation and finite-difference methods. Leave-one-temperature-out cross-validation was used to select a second-order model with λ=0.178, yielding an NRMSE of 0.0335 and an R2 of 0.9923. The predictions at 200 and 400 K remain independently unvalidated, whereas comparison with an independent FDM calculation at 600 K gives an absolute transition-energy error of 0.41 meV (0.35%). The reconstructed spectra exhibit the expected temperature-dependent shifts. An inference speed-up of up to 2.66×107 was obtained for three additional temperatures, excluding model training and reference-data generation costs. These predictions have not been independently validated, and the small dataset limits conclusions regarding generalization. The approach is therefore presented as a preliminary surrogate demonstration for the investigated configuration.

NanomaterialsVol. 16(21)
Princess Nourah bint Abdulrahman University (SA), University of Monastir (TN), Institut Supérieur d'Informatique et des Technologies de Communication de Hammam Sousse (TN), University of Sousse (TN)
GaN-based semiconductor devices and materials
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Accelerating Temperature-Dependent Optical Response Prediction in Truncated Pyramidal GaN/AlN Quantum Dots via Polynomial Ridge Regression — Adel Bouazra, Beriham Ibrahim Basha, et al. · Nanomaterials (2026) | TGRS Research Map | TGRS