Soft-error tolerant design and assessment of the system-on-chip circuit for space application
As semiconductor technology advances, System-on-Chip (SoC) devices have become increasingly vulnerable to space radiation, leading to a higher incidence of soft errors. This paper presents a comprehensive soft-error tolerant design for an SoC. The SoC core is hardened against soft errors through pipeline recovery. The cache subsystem features multi-level novel soft-error protection. The bus matrix is equipped with interfaces capable of correcting single-bit and adjacent double-bit errors. On-chip SRAM resilience is improved using an effective four-bit burst-error-correcting code combined with autonomous detection and write-back mechanisms to prevent error accumulation. A fault injection platform is developed to assess the soft-error tolerance and its validation. The assessment results show a significant reduction in error rates from over 50% to below 25%. In this work, the overheads such as frequency, area and power consumption are compared and analysed through the implementation of a 65 nm CMOS process. The soft-error rate of the rad-hard SoC is approximately 4.57 × 10−8 error/device•day for GEO orbit by heavy-ion experiments. It is indicated that the multiple soft-error tolerance methods described in this paper are effective for SoC circuits.
Authors
- Bing Ji (ORCID: https://orcid.org/0000-0003-0034-6901)
- Fangfa Fu (ORCID: https://orcid.org/0000-0003-4004-8888)
- Haiwei Xue (ORCID: https://orcid.org/0000-0001-7318-9682)
- Xiaoyan Qiang
- Mengfei Xing
- Jinxiang Wang (ORCID: https://orcid.org/0000-0002-5423-5409)
- Jing Shen (ORCID: https://orcid.org/0000-0003-4422-7111)
- Xinqiang Li
Institutions
- Harbin Institute of Technology (CN)
- China Electronics Technology Group Corporation (CN)
Publication Details
- Journal
- International Journal of Electronics
- Published
- 2026-11-09
- DOI
- https://doi.org/10.1080/00207217.2026.2759975
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00