Synergistic reflective back contact and absorber engineering for high-efficiency ultrathin Cu(In,Ga)Se 2 solar cells

Abstract Ultrathin Cu(In,Ga)Se 2 (CIGS) solar cells offer a promising route to reducing material consumption while maintaining the advantages of high-efficiency thin-film photovoltaics.However, reducing the absorber thickness leads to incomplete light absorption and limits device performance. Here, we develop a reflective back contact (RBC) architecture to enhance light trapping in a 600 nm-thick CIGS absorber. Device performance was further improved by tailoring the CIGS deposition process and applying a 15 min RbF post-deposition treatment, leading to enhanced optoelectronic properties. The resulting devices reach a power conversion efficiency of 15.8%, which, to the best of our knowledge, represents the highest reported efficiency for a CIGS solar cell with an absorber thickness of approximately 600 nm. These results demonstrate a pathway to high-efficiency ultrathin CIGS solar cells through the combination of optical engineering, alkali treatment, and absorber growth control.

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Publication Details

Journal
Journal of Physics Energy
Published
2026-11-09
DOI
https://doi.org/10.1088/2515-7655/aebfc7
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Synergistic reflective back contact and absorber engineering for high-efficiency ultrathin Cu(In,Ga)Se 2 solar cells

Vincent Dufoulon, Thomas Tom, Nathanaëlle Schneider, Damien Coutancier et al.
Journal of Physics Energy
Chalcogenide Semiconductor Thin Films
article

Synergistic reflective back contact and absorber engineering for high-efficiency ultrathin Cu(In,Ga)Se 2 solar cells

Vincent Dufoulon, Thomas Tom, Nathanaëlle Schneider, Damien Coutancier, Amelle Rebaï, Stéphane Collin, Negar Naghavi, Jackson Lontchi, Javid Hajhemati, Emilee Fortier, Peggy Marie, Stéfania Cacovich, Yixuan Fu, Loukiana Kozlov
article en

Abstract

Abstract Ultrathin Cu(In,Ga)Se 2 (CIGS) solar cells offer a promising route to reducing material consumption while maintaining the advantages of high-efficiency thin-film photovoltaics.However, reducing the absorber thickness leads to incomplete light absorption and limits device performance. Here, we develop a reflective back contact (RBC) architecture to enhance light trapping in a 600 nm-thick CIGS absorber. Device performance was further improved by tailoring the CIGS deposition process and applying a 15 min RbF post-deposition treatment, leading to enhanced optoelectronic properties. The resulting devices reach a power conversion efficiency of 15.8%, which, to the best of our knowledge, represents the highest reported efficiency for a CIGS solar cell with an absorber thickness of approximately 600 nm. These results demonstrate a pathway to high-efficiency ultrathin CIGS solar cells through the combination of optical engineering, alkali treatment, and absorber growth control.

Journal of Physics Energy
Centre National de la Recherche Scientifique (FR), École Polytechnique (FR), Chimie ParisTech - PSL (FR), Centre de Nanosciences et de Nanotechnologies (FR), Institut Polytechnique de Paris (FR), Institut Photovoltaïque d’Île-de-France (FR)
Chalcogenide Semiconductor Thin Films
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