Room-temperature nonlinear Hall effect in symmetry-engineered van der Waals ferromagnetic (Fe0.74Co0.26)3GeTe2 nanodevices

The second-order nonlinear Hall effect (NLHE), the leading Hall-like response beyond the linear regime, has attracted broad interest as a probe of symmetry breaking and band-geometry-related transport, with potential applications in low-power electronics. However, its realization in van der Waals (vdW) magnets remains fundamentally constrained by the prevalent inversion symmetry of these materials, which forbids a finite second-order Hall conductivity. Here, we realize a robust second-order NLHE up to room temperature in the chemically engineered vdW ferromagnet (Fe0.74Co0.26)3GeTe2. Polarization-resolved second-harmonic generation confirms doping-induced inversion-symmetry breaking, and nonlinear transport measurements reveal a clear quadratic Hall response with a finite second-order Hall conductivity at 300 K. Combined scaling and symmetry analyses suggest an important role of scattering-related mechanisms in the observed NLHE. These findings establish chemically engineered vdW magnets as a promising platform for room-temperature nonlinear transport and nonlinear spintronic functionalities.

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Publication Details

Journal
Applied Physics Letters
Published
2026-11-09
DOI
https://doi.org/10.1063/5.0349509
Primary Topic
Magnetic properties of thin films
Type
article
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article

Room-temperature nonlinear Hall effect in symmetry-engineered van der Waals ferromagnetic (Fe0.74Co0.26)3GeTe2 nanodevices

Yequan Chen, Wei Niu, Kai Gu, Kaifei Liu et al.
Applied Physics Letters
Magnetic properties of thin films
article

Room-temperature nonlinear Hall effect in symmetry-engineered van der Waals ferromagnetic (Fe0.74Co0.26)3GeTe2 nanodevices

Yequan Chen, Wei Niu, Kai Gu, Kaifei Liu, Zhenqi Wu, Xiaoqian Zhang, Lujun Wei, Yong Pu, Rongshun Sun, Leyan Huang, Jiepeng Jiao, Jiacheng Gao, Ping Liu, Shuo Wang
article en

Abstract

The second-order nonlinear Hall effect (NLHE), the leading Hall-like response beyond the linear regime, has attracted broad interest as a probe of symmetry breaking and band-geometry-related transport, with potential applications in low-power electronics. However, its realization in van der Waals (vdW) magnets remains fundamentally constrained by the prevalent inversion symmetry of these materials, which forbids a finite second-order Hall conductivity. Here, we realize a robust second-order NLHE up to room temperature in the chemically engineered vdW ferromagnet (Fe0.74Co0.26)3GeTe2. Polarization-resolved second-harmonic generation confirms doping-induced inversion-symmetry breaking, and nonlinear transport measurements reveal a clear quadratic Hall response with a finite second-order Hall conductivity at 300 K. Combined scaling and symmetry analyses suggest an important role of scattering-related mechanisms in the observed NLHE. These findings establish chemically engineered vdW magnets as a promising platform for room-temperature nonlinear transport and nonlinear spintronic functionalities.

Applied Physics LettersVol. 129(19)
Nanjing University of Posts and Telecommunications (CN), Southeast University (CN)
Magnetic properties of thin films
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Room-temperature nonlinear Hall effect in symmetry-engineered van der Waals ferromagnetic (Fe0.74Co0.26)3GeTe2 nanodevices — Yequan Chen, Wei Niu, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS