Charge Noise in Ge/SiGe Quantum Dots

1. Charge noise in Ge/SiGe quantum dots This technical review compares published charge-noise measurements in germanium quantum dots and examines how barrier depth, device operation, and measurement methods affect the comparison. A worked example shows how different noise spectra with the same amplitude at 1 Hz can produce different total fluctuations over a fixed frequency range. 2. Efficiency and bandwidth in electro-optic transduction This technical note reviews how microwave-to-optical converters report efficiency at the device ports and across the full link. An illustrative two-mode model shows how two settings can yield the same peak conversion efficiency while supporting different bandwidths. 3. Instrument response in ultrafast VO₂ spectroscopy This technical note reviews selected studies of photoinduced changes in vanadium dioxide. A simulated example shows how finite instrument response can bias the fitted decay time and how accounting for that response changes the estimate.

Authors

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2026-11-08
DOI
https://doi.org/10.5281/zenodo.24051817
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

Charge Noise in Ge/SiGe Quantum Dots

Arif Ullah
1 links
Zenodo (CERN European Organization for Nuclear Research)
Semiconductor Quantum Structures and Devices
article

Charge Noise in Ge/SiGe Quantum Dots

Arif Ullah
article en

Abstract

1. Charge noise in Ge/SiGe quantum dots This technical review compares published charge-noise measurements in germanium quantum dots and examines how barrier depth, device operation, and measurement methods affect the comparison. A worked example shows how different noise spectra with the same amplitude at 1 Hz can produce different total fluctuations over a fixed frequency range. 2. Efficiency and bandwidth in electro-optic transduction This technical note reviews how microwave-to-optical converters report efficiency at the device ports and across the full link. An illustrative two-mode model shows how two settings can yield the same peak conversion efficiency while supporting different bandwidths. 3. Instrument response in ultrafast VO₂ spectroscopy This technical note reviews selected studies of photoinduced changes in vanadium dioxide. A simulated example shows how finite instrument response can bias the fitted decay time and how accounting for that response changes the estimate.

Zenodo (CERN European Organization for Nuclear Research)
Semiconductor Quantum Structures and Devices
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