Charge Noise in Ge/SiGe Quantum Dots
1. Charge noise in Ge/SiGe quantum dots This technical review compares published charge-noise measurements in germanium quantum dots and examines how barrier depth, device operation, and measurement methods affect the comparison. A worked example shows how different noise spectra with the same amplitude at 1 Hz can produce different total fluctuations over a fixed frequency range. 2. Efficiency and bandwidth in electro-optic transduction This technical note reviews how microwave-to-optical converters report efficiency at the device ports and across the full link. An illustrative two-mode model shows how two settings can yield the same peak conversion efficiency while supporting different bandwidths. 3. Instrument response in ultrafast VO₂ spectroscopy This technical note reviews selected studies of photoinduced changes in vanadium dioxide. A simulated example shows how finite instrument response can bias the fitted decay time and how accounting for that response changes the estimate.
Authors
- Arif Ullah (ORCID: https://orcid.org/0009-0003-7793-2519)
Publication Details
- Journal
- Zenodo (CERN European Organization for Nuclear Research)
- Published
- 2026-11-08
- DOI
- https://doi.org/10.5281/zenodo.24051817
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00