Power Converters (GaN-on-Si, 4H-SiC, Diamond): From 200 mm Wafer Physics

Project Overview This repository presents a comprehensive 12-part engineering model for designing high-frequency (1 MHz) LLC resonant power converters on wide-bandgap semiconductors. The model covers the complete path from crystal physics to production economics, comparing Silicon, 4H-SiC, GaN-on-Si, and Diamond platforms. Reference Design - Power: 600 W - Input: 400 V DC - Output: 12 V DC - Switching frequency: 1 MHz - Topology: Half-bridge LLC resonant converter Key Results - Estimated system efficiency: 98.6% (SiC) to 99.1% (GaN/Diamond) - GaN-on-Si identified as optimal for mass production - Diamond platform shows best thermal margins (Tj peak 108°C at 150W/1ms pulse) Series Structure (12 Parts) 1. Material properties and crystal physics 2. Device physics and gate-drive synthesis 3. LLC resonant converter design 4. Thermal management and transient reliability 5. Manufacturing yield and system-level economics 6. Automated computational tool (Python) 7. Verification, worst-case analysis, and safety 8. Magnetic design: transformer and inductors 9. Control loop, compensator, protection 10. EMI filter and PCB layout guidelines 11. Certification roadmap and reliability physics 12. Production testing, DFM, and cost-down roadmap Repository Contents - 12 technical documentation files (TXT format) - Python calculator (main.py) for automated design sweeps - Verification module (verification.py) with 6 simulation tests - SPICE netlist (llc_converter.cir) for circuit simulation - Attribution and licensing notices Scientific Foundation The model integrates findings from leading peer-reviewed research: - Mazzone et al. (Nature Electronics, 2026): Intrinsic polarization superjunctions in GaN - Deb et al. (Nature, 2022): Cumulative polarization in conductive interfacial ferroelectrics - Meng et al. (Nature Communications, 2022): Sliding-induced polarization states in 2D ferroelectrics Disclaimer All numerical results are first-order engineering estimates. For final product design, SPICE Level-3 simulation, thermal FEA, EMC verification, and hardware validation are required. See STANDARDS_AND_LICENSE_NOTICE.txt for details on regulatory standards. License This work is released under Creative Commons Attribution 4.0 International (CC BY 4.0). Author Independent researcher. AI tools were used as auxiliary means for structuring and verification; all key results were validated by the author.

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2026-11-07
DOI
https://doi.org/10.5281/zenodo.24028868
Primary Topic
Advanced DC-DC Converters
Type
preprint
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preprint

Power Converters (GaN-on-Si, 4H-SiC, Diamond): From 200 mm Wafer Physics

Azizbek Sadikov
2 links
Zenodo (CERN European Organization for Nuclear Research)
Advanced DC-DC Converters
preprint

Power Converters (GaN-on-Si, 4H-SiC, Diamond): From 200 mm Wafer Physics

Azizbek Sadikov
preprint en

Abstract

Project Overview This repository presents a comprehensive 12-part engineering model for designing high-frequency (1 MHz) LLC resonant power converters on wide-bandgap semiconductors. The model covers the complete path from crystal physics to production economics, comparing Silicon, 4H-SiC, GaN-on-Si, and Diamond platforms. Reference Design - Power: 600 W - Input: 400 V DC - Output: 12 V DC - Switching frequency: 1 MHz - Topology: Half-bridge LLC resonant converter Key Results - Estimated system efficiency: 98.6% (SiC) to 99.1% (GaN/Diamond) - GaN-on-Si identified as optimal for mass production - Diamond platform shows best thermal margins (Tj peak 108°C at 150W/1ms pulse) Series Structure (12 Parts) 1. Material properties and crystal physics 2. Device physics and gate-drive synthesis 3. LLC resonant converter design 4. Thermal management and transient reliability 5. Manufacturing yield and system-level economics 6. Automated computational tool (Python) 7. Verification, worst-case analysis, and safety 8. Magnetic design: transformer and inductors 9. Control loop, compensator, protection 10. EMI filter and PCB layout guidelines 11. Certification roadmap and reliability physics 12. Production testing, DFM, and cost-down roadmap Repository Contents - 12 technical documentation files (TXT format) - Python calculator (main.py) for automated design sweeps - Verification module (verification.py) with 6 simulation tests - SPICE netlist (llc_converter.cir) for circuit simulation - Attribution and licensing notices Scientific Foundation The model integrates findings from leading peer-reviewed research: - Mazzone et al. (Nature Electronics, 2026): Intrinsic polarization superjunctions in GaN - Deb et al. (Nature, 2022): Cumulative polarization in conductive interfacial ferroelectrics - Meng et al. (Nature Communications, 2022): Sliding-induced polarization states in 2D ferroelectrics Disclaimer All numerical results are first-order engineering estimates. For final product design, SPICE Level-3 simulation, thermal FEA, EMC verification, and hardware validation are required. See STANDARDS_AND_LICENSE_NOTICE.txt for details on regulatory standards. License This work is released under Creative Commons Attribution 4.0 International (CC BY 4.0). Author Independent researcher. AI tools were used as auxiliary means for structuring and verification; all key results were validated by the author.

Zenodo (CERN European Organization for Nuclear Research)
Affordable and clean energy, Industry, innovation and infrastructure
Advanced DC-DC Converters
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