Emergent Giant Topological Hall Effect at the van der Waals Ferromagnet/Topological Insulator Interface

Abstract Two-dimensional (2D) van der Waals (vdW) magnet-based heterostructures provide a vital platform for manipulating magnetic ground states and hosting complex spin textures. The topological Hall effect (THE) is a powerful tool for probing these textures in such systems. However, achieving a sizable THE in 2D vdW ferromagnets remains challenging due to the absence of broken inversion symmetry and sufficiently strong spin–orbit coupling (SOC). Here, we report an emergent giant topological Hall resistivity of 6.9 μΩ·cm at 10 K by interfacing the 2D ferromagnet Fe3GeTe2 (FGT) with the topological insulator BiSbTeSe2 (BSTS). Systematic temperature- and thickness-dependent studies suggest the origin of this pronounced signal to be the interfacial Dzyaloshinskii–Moriya interaction (DMI). Furthermore, temperature-field mapping reveals the coexistence of two distinct phases that we identify as having opposite topological charge. Our results establish these vdW ferromagnet/topological insulator heterostructures as a robust platform for enhanced interfacial THE, opening new avenues for high-efficiency topological spintronics.

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Publication Details

Journal
Nano Letters
Published
2026-11-07
DOI
https://doi.org/10.1021/acs.nanolett.6c03255
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Emergent Giant Topological Hall Effect at the van der Waals Ferromagnet/Topological Insulator Interface

Abhinab Mohapatra, P. S. Anil Kumar, Gagan Rastogi, R. Ganesan et al.
3 links
Nano Letters
Magnetic properties of thin films
article

Emergent Giant Topological Hall Effect at the van der Waals Ferromagnet/Topological Insulator Interface

Abhinab Mohapatra, P. S. Anil Kumar, Gagan Rastogi, R. Ganesan, Devyani Sharma
article en

Abstract

Abstract Two-dimensional (2D) van der Waals (vdW) magnet-based heterostructures provide a vital platform for manipulating magnetic ground states and hosting complex spin textures. The topological Hall effect (THE) is a powerful tool for probing these textures in such systems. However, achieving a sizable THE in 2D vdW ferromagnets remains challenging due to the absence of broken inversion symmetry and sufficiently strong spin–orbit coupling (SOC). Here, we report an emergent giant topological Hall resistivity of 6.9 μΩ·cm at 10 K by interfacing the 2D ferromagnet Fe3GeTe2 (FGT) with the topological insulator BiSbTeSe2 (BSTS). Systematic temperature- and thickness-dependent studies suggest the origin of this pronounced signal to be the interfacial Dzyaloshinskii–Moriya interaction (DMI). Furthermore, temperature-field mapping reveals the coexistence of two distinct phases that we identify as having opposite topological charge. Our results establish these vdW ferromagnet/topological insulator heterostructures as a robust platform for enhanced interfacial THE, opening new avenues for high-efficiency topological spintronics.

Nano Letters
Indian Institute of Science Bangalore (IN)
Department of Science and Technology, Ministry of Science and Technology, India, Council of Scientific and Industrial Research, India, Ministry of Education, India, Mission on Nano Science and Technology
Openalex Percentile: Top 33%
Magnetic properties of thin films
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