Effect of Annealing Atmospheres on the Optoelectronic Properties of N-Doped Ga2O3 Films

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Publication Details

Journal
Acta Physica Sinica
Published
2026-11-07
DOI
https://doi.org/10.7498/aps.76.20261221
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Effect of Annealing Atmospheres on the Optoelectronic Properties of N-Doped Ga2O3 Films

Weiman LIU, 邓金祥, Yang Xiaolei, Weijian Zhai et al.
Acta Physica Sinica
Ga2O3 and related materials
article

Effect of Annealing Atmospheres on the Optoelectronic Properties of N-Doped Ga2O3 Films

Weiman LIU, 邓金祥, Yang Xiaolei, Weijian Zhai, WU Rui
article en

Abstract

No abstract available for this paper.
Acta Physica SinicaVol. 76(3)
Openalex Percentile: Top 35%
Ga2O3 and related materials
DOIOpen Access PDFOpenAlex
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Effect of Annealing Atmospheres on the Optoelectronic Properties of N-Doped Ga2O3 Films — Weiman LIU, 邓金祥, et al. · Acta Physica Sinica (2026) | TGRS Research Map | TGRS