Transport study of TaSe 2 -contacted twisted bilayer WSe 2

Abstract Twisted bilayer WSe 2 (tWSe 2 ) offers a highly tunable semiconductor moiré platform for exploring the interplay between correlated electronic states and superconductivity. Reliable low-temperature electrical access to WSe 2 is essential for resolving these phases. Here, we employ few-layer 2H-TaSe 2 van der Waals contacts in dual-gated, AA-stacked tWSe 2 devices. Gate-dependent transport reveals a superconducting pocket adjacent to the correlated insulating state near ν = 1. The superconducting state is continuously suppressed by increasing temperature, dc bias current, and perpendicular magnetic field. Analysis of the resistive transitions gives T c = 0.462 K, B c2⊥ = 0.104 T, and a Ginzburg-Landau coherence length of 56.1 nm, consistent with previous studies. The superconducting response remains visible under nominally in-plane fields of several tesla and becomes indistinguishable from the normalstate response near an approximate scale of 10 T. These results are consistent with the established superconducting phenomenology of tWSe 2 and demonstrate transparent TaSe 2 -based contacts for studying interaction-driven quantum phases in hole-doped WSe 2 moiré systems.

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Publication Details

Journal
Chinese Physics B
Published
2026-11-06
DOI
https://doi.org/10.1088/1674-1056/aebeb2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Transport study of TaSe 2 -contacted twisted bilayer WSe 2

Bingbing Tong, Takashi Taniguchi, Ziqi Sun, Chuanqi Zheng et al.
4 links
Chinese Physics B
2D Materials and Applications
article

Transport study of TaSe 2 -contacted twisted bilayer WSe 2

Bingbing Tong, Takashi Taniguchi, Ziqi Sun, Chuanqi Zheng, Jinfeng Jia, Wanghao Tian, Jiayi Li, Li Lu, Tingxin Li, Fan Xu, Kenji Watanabe, Xiaoxue Liu
article en

Abstract

Abstract Twisted bilayer WSe 2 (tWSe 2 ) offers a highly tunable semiconductor moiré platform for exploring the interplay between correlated electronic states and superconductivity. Reliable low-temperature electrical access to WSe 2 is essential for resolving these phases. Here, we employ few-layer 2H-TaSe 2 van der Waals contacts in dual-gated, AA-stacked tWSe 2 devices. Gate-dependent transport reveals a superconducting pocket adjacent to the correlated insulating state near ν = 1. The superconducting state is continuously suppressed by increasing temperature, dc bias current, and perpendicular magnetic field. Analysis of the resistive transitions gives T c = 0.462 K, B c2⊥ = 0.104 T, and a Ginzburg-Landau coherence length of 56.1 nm, consistent with previous studies. The superconducting response remains visible under nominally in-plane fields of several tesla and becomes indistinguishable from the normalstate response near an approximate scale of 10 T. These results are consistent with the established superconducting phenomenology of tWSe 2 and demonstrate transparent TaSe 2 -based contacts for studying interaction-driven quantum phases in hole-doped WSe 2 moiré systems.

Chinese Physics B
Shanghai Jiao Tong University (CN), Chinese Academy of Sciences (CN), National Institute for Materials Science (JP)
National Natural Science Foundation of China
Openalex Percentile: Top 32%
2D Materials and Applications
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