Zirconium Doping Inhibits the Oxidation of Tin and Improves the Optical Characteristics of Quantum Dots Embedded Glass

Lead-free quantum dots (QDs) embedded glasses have attracted significant attention as ecofriendly alternatives to lead-based materials for solid-state lighting, yet the performance of Sn-based QDs is severely limited by the prone oxidation of Sn 2+ and poor photoluminescence efficiency. In this study, lead-free CsSnBr 3 /SnO 2 QDs embedded in B 2 O 3 -SiO 2 -ZnO borosilicate glass were successfully prepared using the melt-quenching method. The introduction of zirconium Zr 4+ effectively inhibits Sn2+ oxidation and enhances QD quality within the glass matrix. Due to its lower electronegativity compared to Sn, Zr 4+ preferentially coordinates with non-bridging oxygen to form stable Zr-O bonds, thereby shielding Sn 2+ from oxidation. Furthermore, Zr 4+ acts as a nucleating agent to facilitate uniform nucleation while simultaneously strengthening the glass network structure. This structural reinforcement constrains excessive ion migration, refining the QD size and reducing non-radiative surface defects. Consequently, Zr 4+ doping boosts the luminescence intensity by up to 1.6-fold and enhances the photoluminescence quantum yield by 1.26-fold. Finally, the potential applications of this material in white light-emitting diodes (WLEDs) were demonstrated, achieving high color rendering performance. These results provide a robust reference for improving the optical characteristics of leadfree Sn-based quantum dots.