Gate Dielectric Engineering and Performance Optimization of Monolayer MoS2 Field-Effect Transistors

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Publication Details

Journal
Acta Physica Sinica
Published
2026-11-07
DOI
https://doi.org/10.7498/aps.76.20261237
Primary Topic
2D Materials and Applications
Type
article
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article

Gate Dielectric Engineering and Performance Optimization of Monolayer MoS2 Field-Effect Transistors

刘立英 Liu Liying, Wang Ruzhi, XING Lin, QI Jinfeng et al.
Acta Physica Sinica
2D Materials and Applications
article

Gate Dielectric Engineering and Performance Optimization of Monolayer MoS2 Field-Effect Transistors

刘立英 Liu Liying, Wang Ruzhi, XING Lin, QI Jinfeng, Zhao Bingchao
article en

Abstract

No abstract available for this paper.
Acta Physica SinicaVol. 76(3)
Openalex Percentile: Top 33%
2D Materials and Applications
DOIOpen Access PDFOpenAlex
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Gate Dielectric Engineering and Performance Optimization of Monolayer MoS2 Field-Effect Transistors — 刘立英 Liu Liying, Wang Ruzhi, et al. · Acta Physica Sinica (2026) | TGRS Research Map | TGRS