Optimization of the contact interface and gate voltage modulation of spin polarization of the spin field effect transistor based on half-metal FeCl2 electrodes

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Publication Details

Journal
Acta Physica Sinica
Published
2026-11-07
DOI
https://doi.org/10.7498/aps.76.20261079
Primary Topic
2D Materials and Applications
Type
article
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article

Optimization of the contact interface and gate voltage modulation of spin polarization of the spin field effect transistor based on half-metal FeCl2 electrodes

Yaqi Kong, WANG Shaoxian, WANG Minglang, WANG Chuankui et al.
Acta Physica Sinica
2D Materials and Applications
article

Optimization of the contact interface and gate voltage modulation of spin polarization of the spin field effect transistor based on half-metal FeCl2 electrodes

Yaqi Kong, WANG Shaoxian, WANG Minglang, WANG Chuankui, WEI Mingzhi, ZHANG Guangping
article en

Abstract

No abstract available for this paper.
Acta Physica SinicaVol. 76(3)
Openalex Percentile: Top 33%
2D Materials and Applications
DOIOpen Access PDFOpenAlex
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Optimization of the contact interface and gate voltage modulation of spin polarization of the spin field effect transistor based on half-metal FeCl2 electrodes — Yaqi Kong, WANG Shaoxian, et al. · Acta Physica Sinica (2026) | TGRS Research Map | TGRS