The Anions and Cations Co-doping Indium Zinc Tin Oxide Thin Film Transistors Based on Lanthanide Elements

Authors

Publication Details

Journal
Acta Physica Sinica
Published
2026-11-07
DOI
https://doi.org/10.7498/aps.76.20261249
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
NOV
article

The Anions and Cations Co-doping Indium Zinc Tin Oxide Thin Film Transistors Based on Lanthanide Elements

Ling Xiao, Shuchang Liu, Chen Longlong, Li Xifeng et al.
Acta Physica Sinica
Thin-Film Transistor Technologies
article

The Anions and Cations Co-doping Indium Zinc Tin Oxide Thin Film Transistors Based on Lanthanide Elements

Ling Xiao, Shuchang Liu, Chen Longlong, Li Xifeng, XU Meng, Zhang Jianhua
article en

Abstract

No abstract available for this paper.
Acta Physica SinicaVol. 76(3)
Openalex Percentile: Top 26%
Thin-Film Transistor Technologies
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Laika access coming soon
The Anions and Cations Co-doping Indium Zinc Tin Oxide Thin Film Transistors Based on Lanthanide Elements — Ling Xiao, Shuchang Liu, et al. · Acta Physica Sinica (2026) | TGRS Research Map | TGRS