Optical anisotropy of InAs quantum dots and quantum dashes on InP
Abstract Elongated InAs quantum dashes on InP introduce polarization anisotropy that limits polarization-insensitive photonic devices. We evaluate InAs quantum dots grown using a GaAs insertion layer that suppresses dash formation. Room-temperature polarization-resolved photoluminescence shows that the degree of linear polarization (DoLP) decreases from 0.3227 ± 0.0052 for a dash-dominant reference to 0.0382 ± 0.0029 for a dot-dominant sample. Broad-area lasers fabricated from eight stacked dot layers show no statistically significant threshold-current dependence on cavity orientation over 600–1200 µm cavities. These results indicate optically near-isotropic InAs quantum dots on InP grown using the GaAs insertion layer.
Authors
- Masahiro Kakuda (ORCID: https://orcid.org/0009-0009-4786-8097)
- Jinkwan Kwoen (ORCID: https://orcid.org/0000-0002-5273-3981)
- Naokatsu Yamamoto (ORCID: https://orcid.org/0009-0005-4073-1355)
- Hiroki Inoue
- Kouichi AKAHANE (ORCID: https://orcid.org/0000-0002-8919-1717)
- 泰彦 荒川
- Atsushi Matsumoto (ORCID: https://orcid.org/0000-0003-0885-6957)
Institutions
- Institute for Nano Quantum Information Electronics, The University of Tokyo (JP)
- The University of Tokyo (JP)
- National Institute of Information and Communications Technology (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2026-11-06
- DOI
- https://doi.org/10.35848/1347-4065/aebf3f
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- New Energy and Industrial Technology Development Organization
- Japan Society for the Promotion of Science