Wavon Field-Based Generalized In-Memory Computing Chip Architecture

What if a chip could be wired by field instead of lithography? The Wavon architecture answers with a single structural proposition: computation need not be carried by wired electrons at all. It replaces fixed interconnect with a blank topological lattice, in which 20-80 GHz millimetre-band electromagnetic evanescent waves act as the signal carrier, and solid-state magnetic skyrmions hold the state of the machine. Nothing in the substrate is hardwired. PDMM software instructions rewrite the steady-state MTJ magnetoresistance, configuring waveguide routing and model weights online, while the physical eigenstructure of the field does the arithmetic: discrete topological boundaries compress the O(n²) cost of conventional matrix multiply-accumulate into a constant O(1) latency intrinsic to MEPS wavefront evolution. The chip leaves the fab as a uniform blank lattice on a 28 nm ultra-near-field substrate, built by a three-layer ultraviolet nanoimprint co-integration process. Vernier Moiré fringes formed by lattice arrays and passive metallic meshes deliver physical self-alignment between layers, removing the multilayer precision overlay lithography and heavy ion doping that conventional silicon requires, and removing any dependence on high-numerical-aperture front-end lithography across the full operational cycle. Interleaved coplanar MTJ and skyrmion arrangements form a globally vacuum-sealed microcavity tunnelling waveguide system that fixes the local guided-mode refractive index at unity with dn/dT = 0. Rare-earth-free, heavy-metal-free RE-TM heterostructures anchor the skyrmions with zero drift at room temperature. Two modes share one hardware origin: binary wavefront carry arithmetic for absolute-precision digital inference, and continuous field-state evolution for energy-level excitation of topological states. The full fabrication process adapts to mature mass-production semiconductor lines without specialised new equipment. in-memory computing, compute-in-memory, memory wall, power wall, quantum wall, von Neumann bottleneck, memristor, CBRAM, PCM, MRAM, silicon photonics, metasurface, VCMA, MTJ, skyrmion, magnetic skyrmion, evanescent wave, lithography, nanoimprint lithography, CPU, GPU, TPU, photonic computing, topological photonics, 3D integration, 28 nm, post-Moore, AI accelerator, neuromorphic computing, non-volatile memory, synaptic plasticity, write endurance