Design of sub-1.8 dB mean NF 5G LNA using T-load and bias isolation in 55 nm RFSOI

This paper presents a sub-6 GHz low-noise amplifier (LNA) design for 5 G communication RF front-end in the N77 band. A T-load network that can effectively increase the output matching bandwidth is proposed and analysed, which can create input matching bipolar points near the optimal matching point without affecting the gain, thus achieving a wider output matching. This paper also discusses the effect of different types of gate bias isolators on the overall circuit in terms of Matching, Noise Figure (NF) and Gain. The measured results show that the LNA 3-dB gain bandwidth is from 3.2 to 5.5 GHz. Minimum NF is 1.69 dB at 3.8 GHz. Peak gain is 15.53 dB at 3.9 GHz. The effective bandwidth for 10-dB return loss is 3.6 to 4.1 GHz, where the average NF is 1.8 dB. IIP3 = −8.01 dBm at 3.9 GHz, a power consumption of 18 mW at DC and a total area (including ESD and PAD) of 0.82 mm 2.