Doping-Dependent Performance of PEDOT: PSS Hole-Transport-Layer Organic Photovoltaic Cells: A TCAD Study

The present study numerically investigates the influence of PEDOT acceptor doping on the performance of an ITO/PEDOT/organic/ZnO/Al organic photovoltaic (OPV) cell using a drift-diffusion TCAD framework.The PEDOT acceptor concentration was systematically varied from 10¹⁴ to 10¹⁹ cm⁻³ while maintaining a fixed HTL thickness of 1 nm and identical optical and electrical conditions for all simulations.The calculated photovoltaic response shows a weak dependence at low and intermediate doping, followed by an increasingly measurable response in the 10 17 -10 18 cm -3 region, which is interpreted as an onset region of device-level sensitivity rather than a universal material threshold.Across the investigated range, Jsc increases from 34.1493 to 34.5061 mA cm⁻² (1.04%), Voc from 1.61617 to 1.62179 V (0.35%), FF from 36.7103 to 37.2939% (1.59%), and PCE from 20.2608 to 20.8703% (3.01%).The comparatively larger FF response is consistent with reduced transport losses associated with increased HTL conductivity, while the smaller changes in Jsc Doping-Dependent … Papa Lat Tabara Sow et al.

Publication Details

Journal
Journal of Chemical Biological and Physical Sciences
Published
2026-11-05
DOI
https://doi.org/10.24214/jcbps.c.16.4.67995
Primary Topic
Organic Electronics and Photovoltaics
Type
article
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article

Doping-Dependent Performance of PEDOT: PSS Hole-Transport-Layer Organic Photovoltaic Cells: A TCAD Study

Journal of Chemical Biological and Physical Sciences
Organic Electronics and Photovoltaics
article

Doping-Dependent Performance of PEDOT: PSS Hole-Transport-Layer Organic Photovoltaic Cells: A TCAD Study

article en

Abstract

The present study numerically investigates the influence of PEDOT acceptor doping on the performance of an ITO/PEDOT/organic/ZnO/Al organic photovoltaic (OPV) cell using a drift-diffusion TCAD framework.The PEDOT acceptor concentration was systematically varied from 10¹⁴ to 10¹⁹ cm⁻³ while maintaining a fixed HTL thickness of 1 nm and identical optical and electrical conditions for all simulations.The calculated photovoltaic response shows a weak dependence at low and intermediate doping, followed by an increasingly measurable response in the 10 17 -10 18 cm -3 region, which is interpreted as an onset region of device-level sensitivity rather than a universal material threshold.Across the investigated range, Jsc increases from 34.1493 to 34.5061 mA cm⁻² (1.04%), Voc from 1.61617 to 1.62179 V (0.35%), FF from 36.7103 to 37.2939% (1.59%), and PCE from 20.2608 to 20.8703% (3.01%).The comparatively larger FF response is consistent with reduced transport losses associated with increased HTL conductivity, while the smaller changes in Jsc Doping-Dependent … Papa Lat Tabara Sow et al.

Journal of Chemical Biological and Physical SciencesVol. 16(4)
Openalex Percentile: Top 25%
Organic Electronics and Photovoltaics
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