Carrier transport mechanism of GaN vertical Schottky barrier diodes with p-GaN termination
Abstract This paper investigates GaN vertical Schottky barrier diodes(SBDs) with p-GaN termination structure. The forward and reverse electrical characteristics of the two devices, namely SBDs with TiN/Au and Ni/Au as anode metals,are systematically investigated, and carrier transport models are established for both devices. The SBD with TiN/Au anode follows the thermionic emission model for forward conduction, while its reverse leakage conforms to a combined model of thermionic emission, Poole Frenkel emission, and trap assisted tunneling. For the SBD with Ni/Au anode, forward conduction is governed by thermionic emission and trap assisted tunneling, and reverse leakage follows a combined model of trap assisted tunneling and phonon assisted tunneling.
Authors
- Guofeng Yang (ORCID: https://orcid.org/0000-0002-4409-9685)
- Fengqiu Jiang (ORCID: https://orcid.org/0009-0003-9227-6935)
- Xiao Renshaw Wang (ORCID: https://orcid.org/0000-0002-5503-9899)
- Jing-Ping Ao
- Zhiwei Chen (ORCID: https://orcid.org/0000-0002-7242-2662)
- Ping Gong
- Dawei Yan (ORCID: https://orcid.org/0000-0002-2457-4936)
- Jianbo Liang (ORCID: https://orcid.org/0009-0000-2662-5592)
- Tao Liu (ORCID: https://orcid.org/0009-0005-8717-1260)
- Lihua Bai (ORCID: https://orcid.org/0000-0001-8860-8712)
- Sen Peng (ORCID: https://orcid.org/0009-0008-5612-050X)
- Zhangcheng Liu
- Xia Zhu
- JingRun Miao
- Tian-Yun Zhu
- Tian-Yi He
- Yang Li
- Chao-Fei Huang
Institutions
- Jiangnan University (CN)
- Osaka Metropolitan University (JP)
Publication Details
- Journal
- Journal of Physics D Applied Physics
- Published
- 2026-11-04
- DOI
- https://doi.org/10.1088/1361-6463/aebda1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00