Formation of nanostructural elements in hypereutetic silumine under discrete-pulse electric current influence on the melt

The structure formation of a hypereutectic aluminum alloy with 16.5% Si after high-energy action of periodically changing packets of unipolar electric pulses on the melt was studied. The morphology and structure of the primary silicon phase were controlled by varying the frequency and amplitude characteristics of the current. The research method is based on a comprehensive analysis of the transformation of the micro-inhomogeneous structure of the melt and its subsequent crystallization under conditions of changing the short-range atomic order Si–Si. The scientific novelty consists in the revealed polymorphism of silicon and suppression of anisotropic crystal growth under discrete-pulse electrophysical influence on the liquid phase. The extended understanding of the mechanisms of grinding, the formation of submicron and nanoscale structural components without the use of traditional chemical modifiers, allows us to create hypereutectic silumins with a compact silicon and significantly improved plastic characteristics