Charge-transfer states in poly(3-hexylthiophene-2,5-diyl) induced by chemical interaction with molybdenum trioxide

Abstract Charge transfer at the interface between poly(3-hexylthiophene-2,5-diyl) (P3HT) and molybdenum trioxide (MoO₃) was investigated by current–voltage measurements and optical absorption spectroscopy. In FTO/MoO₃/P3HT/Al devices, increasing the MoO₃ thickness from 2 to 20 nm reduced the turn-on voltage and increased the forward current. Compared with the P3HT-only region, the P3HT/MoO₃ region exhibited an increase in absorbance at 650–720 nm. The absorbance in the 650–720 nm also tended to increase with MoO₃ thickness. These results suggest that chemical interactions between P3HT and MoO₃ generate energetically distributed gap states that could facilitate carrier injection.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2026-11-04
DOI
https://doi.org/10.35848/1347-4065/aebd9d
Primary Topic
Organic Electronics and Photovoltaics
Type
article
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article

Charge-transfer states in poly(3-hexylthiophene-2,5-diyl) induced by chemical interaction with molybdenum trioxide

Norio Onojima, Yu Maeda, Kanta Hatano, Xu Jin
Japanese Journal of Applied Physics
Organic Electronics and Photovoltaics
article

Charge-transfer states in poly(3-hexylthiophene-2,5-diyl) induced by chemical interaction with molybdenum trioxide

Norio Onojima, Yu Maeda, Kanta Hatano, Xu Jin
article en

Abstract

Abstract Charge transfer at the interface between poly(3-hexylthiophene-2,5-diyl) (P3HT) and molybdenum trioxide (MoO₃) was investigated by current–voltage measurements and optical absorption spectroscopy. In FTO/MoO₃/P3HT/Al devices, increasing the MoO₃ thickness from 2 to 20 nm reduced the turn-on voltage and increased the forward current. Compared with the P3HT-only region, the P3HT/MoO₃ region exhibited an increase in absorbance at 650–720 nm. The absorbance in the 650–720 nm also tended to increase with MoO₃ thickness. These results suggest that chemical interactions between P3HT and MoO₃ generate energetically distributed gap states that could facilitate carrier injection.

Japanese Journal of Applied Physics
University of Yamanashi (JP)
Openalex Percentile: Top 26%
Organic Electronics and Photovoltaics
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