High-Entropy A-Site Disorder Enhances Oxygen Evolution Reaction Activity and Stability in Nickelate Thin Films

Rare-earth nickelates are among the most active oxide electrocatalysts for the oxygen evolution reaction (OER), owing to their tunable Ni-O covalency, near-unity eg occupancy, and sensitivity to A-site chemistry, oxygen stoichiometry, and epitaxial strain. Here, we use epitaxial A-site high-entropy (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3 thin films to reveal how epitaxial strain influences defect formation, Ni valence, electronic structure, and OER activity in a chemically disordered rare-earth (RE) sublattice. Tensile strain promotes Ruddlesden-Popper fault formation, interrupts the corner-sharing NiO6 network, and lowers the average Ni oxidation state. Although the occupied density of states near the Fermi level remains largely unchanged, O K-edge X-ray absorption spectroscopy reveals increased low-energy unoccupied states under tensile strain. First-principles calculations suggest that tensile strain shifts RE 4f-derived states toward the Fermi level, enhancing RE 4f-O 2p-Ni 3d hybridization. These coupled structural and electronic changes lead to earlier OER onset, stronger pre-catalytic Ni redox features, and higher activity than compressively strained films and representative single-A-site nickelates. The high-entropy nickelate also shows enhanced resistance to OER-induced structural degradation compared with LaNiO3. These results suggest that A-site configurational disorder and epitaxial strain can jointly tune defect formation and rare-earth-derived electronic states, providing a route for improving perovskite oxide electrocatalysts.

Authors

Publication Details

Journal
arXiv (Cornell University)
Published
2026-11-02
DOI
https://doi.org/10.48550/arxiv.2611.02796
Primary Topic
Electrocatalysts for Energy Conversion
Type
preprint
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preprint

High-Entropy A-Site Disorder Enhances Oxygen Evolution Reaction Activity and Stability in Nickelate Thin Films

E. H. Krenkel, Hyoju Park, Krishna Prasad Koirala, Iradwikanari Waluyo et al.
arXiv (Cornell University)
Electrocatalysts for Energy Conversion
preprint

High-Entropy A-Site Disorder Enhances Oxygen Evolution Reaction Activity and Stability in Nickelate Thin Films

E. H. Krenkel, Hyoju Park, Krishna Prasad Koirala, Iradwikanari Waluyo, Peter V. Sushko, Mark E. Bowden, Conan Weiland, Jueli Shi, Aiping Chen, Min-Ju Choi, Yingge Du, Adrian Hunt, Le Wang
preprint en

Abstract

Rare-earth nickelates are among the most active oxide electrocatalysts for the oxygen evolution reaction (OER), owing to their tunable Ni-O covalency, near-unity eg occupancy, and sensitivity to A-site chemistry, oxygen stoichiometry, and epitaxial strain. Here, we use epitaxial A-site high-entropy (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)NiO3 thin films to reveal how epitaxial strain influences defect formation, Ni valence, electronic structure, and OER activity in a chemically disordered rare-earth (RE) sublattice. Tensile strain promotes Ruddlesden-Popper fault formation, interrupts the corner-sharing NiO6 network, and lowers the average Ni oxidation state. Although the occupied density of states near the Fermi level remains largely unchanged, O K-edge X-ray absorption spectroscopy reveals increased low-energy unoccupied states under tensile strain. First-principles calculations suggest that tensile strain shifts RE 4f-derived states toward the Fermi level, enhancing RE 4f-O 2p-Ni 3d hybridization. These coupled structural and electronic changes lead to earlier OER onset, stronger pre-catalytic Ni redox features, and higher activity than compressively strained films and representative single-A-site nickelates. The high-entropy nickelate also shows enhanced resistance to OER-induced structural degradation compared with LaNiO3. These results suggest that A-site configurational disorder and epitaxial strain can jointly tune defect formation and rare-earth-derived electronic states, providing a route for improving perovskite oxide electrocatalysts.

arXiv (Cornell University)
Electrocatalysts for Energy Conversion
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