Continuous Kinetic Model of Counterion-Mediated Redox Switching in 14-Bit Molecular Memristors for Analog In-Memory Computing
Kinetic molecular memristors offer a compelling path toward high-density analog in-memory computing by achieving 14-bit precision, wherein discrete redox transitions and counterion displacements dictate non-volatile conductance across a deterministic energy landscape. However, integrating these nanoscale kinetics into macroscale circuit simulators has remained bottlenecked by derivative discontinuities and solver convergence failures. Here, we present a physics-inspired continuous kinetic model that bridges microscopic molecular transport with scalable circuit architectures. By casting discrete intramolecular states, counterion relaxation dynamics, and Marcus-Hush-Chidsey electron transfer rates into continuously differentiable state variables, we derive a robust, Spectre-compatible compact model and a matching vectorized Python solver. This work culminates in a unified computational platform to reliably predict the behavior of complex circuits built on these molecular memristors.
Authors
- Su‐in Yi (ORCID: https://orcid.org/0000-0001-7957-8953)
- Dhiman Biswas (ORCID: https://orcid.org/0009-0008-7272-2770)
- Mike Banad
- T. Venkatesan
- Nazmus Saadat As-Saquib
- Logan Larsh
Publication Details
- Journal
- arXiv (Cornell University)
- Published
- 2026-11-02
- DOI
- https://doi.org/10.48550/arxiv.2611.02520
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- preprint