ELECTRICAL CONDUCTIVITY OF TIN-DOPED INDIUM OXIDE FILMS

The electrical conductivity mechanism of ITO semiconductor films deposited by reactive magnetron sputtering on glass substrates with and without subsequent high-temperature annealing was studied. It was found that high- ­temperature annealing of ITO films Immediately after deposition, it promotes an increase in electrical conductivity due to increased film crystallinity and complete activation of the dopant ­. Both effects lead to a reduction in surface resistance by more than 20 times. It has been established that in ITO films In the low temperature range, ­the Mott conduction mechanism is dominant.