High-Performance GaN HEMTs on an Ultrathin 4H-SiC/Diamond Engineered Substrate via Optimized Epitaxial Growth

Abstract GaN high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin 4H-SiC/diamond engineered substrate using an optimized epitaxial growth scheme. Optimization of the epitaxial growth conditions improved epitaxial quality and carrier transport properties.The fabricated devices exhibited a maximum DC drain current density of approximately 1.25 A/mm and a peak transconductance of 367 mS/mm, demonstrating high current capability on the engineered substrate platform. Infrared thermography yielded a low-power thermal resistance of 0.92 K•mm/W, compared with 2.46 K•mm/W for a GaN-on-SiC reference device.The device on the engineered substrate sustained a maximum DC power dissipation density of 37.8 W/mm. These results demonstrate the potential of the optimized GaN-on-4H-SiC/diamond platform for high-performance GaN devices with enhanced thermal management.

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Publication Details

Journal
Semiconductor Science and Technology
Published
2026-11-02
DOI
https://doi.org/10.1088/1361-6641/aebca9
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

High-Performance GaN HEMTs on an Ultrathin 4H-SiC/Diamond Engineered Substrate via Optimized Epitaxial Growth

Dongguo Zhang, Yu Lei, Sen Huang, Wenjing Jiang et al.
Semiconductor Science and Technology
GaN-based semiconductor devices and materials
article

High-Performance GaN HEMTs on an Ultrathin 4H-SiC/Diamond Engineered Substrate via Optimized Epitaxial Growth

Dongguo Zhang, Yu Lei, Sen Huang, Wenjing Jiang, Kexin Deng, Fengwen Mu, Jianchao Wang, Ke Wei, Lizhao Cen, Xinyu Liu, Xinhua Wang
article en

Abstract

Abstract GaN high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin 4H-SiC/diamond engineered substrate using an optimized epitaxial growth scheme. Optimization of the epitaxial growth conditions improved epitaxial quality and carrier transport properties.The fabricated devices exhibited a maximum DC drain current density of approximately 1.25 A/mm and a peak transconductance of 367 mS/mm, demonstrating high current capability on the engineered substrate platform. Infrared thermography yielded a low-power thermal resistance of 0.92 K•mm/W, compared with 2.46 K•mm/W for a GaN-on-SiC reference device.The device on the engineered substrate sustained a maximum DC power dissipation density of 37.8 W/mm. These results demonstrate the potential of the optimized GaN-on-4H-SiC/diamond platform for high-performance GaN devices with enhanced thermal management.

Semiconductor Science and Technology
Chinese Academy of Sciences (CN), Institute of Microelectronics (CN), The 28th Research Institute of China Electronics Technology Group Corporation (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, University of Chinese Academy of Sciences
Openalex Percentile: Top 25%
GaN-based semiconductor devices and materials
DOIOpen Access PDFOpenAlex
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High-Performance GaN HEMTs on an Ultrathin 4H-SiC/Diamond Engineered Substrate via Optimized Epitaxial Growth — Dongguo Zhang, Yu Lei, et al. · Semiconductor Science and Technology (2026) | TGRS Research Map | TGRS