Near-threshold photoemission characterization of K2CsSb photocathodes
We present a near-threshold photoemission study of K2CsSb photocathodes, examining the quantum efficiency (QE), mean transverse energy (MTE), and electron energy distributions (EEDs) over a wide range of photon energies. The work function is determined to be 1.65 ± 0.1 eV from EED measurements. Near threshold, both QE and the high-energy tail of the emitted-electron distribution exhibit a universal exponential dependence characterized by an energy scale of ∼38.5 meV. A direct comparison with Cs3Sb reveals strikingly similar near-threshold features in QE and MTE spectral response, and energy-distribution shapes. Our results demonstrate that near-threshold photoemission in alkali-antimonide photocathodes is governed by the combined effects of disorder and electron–phonon coupling-induced band-tail states along with transport scattering-driven energy redistribution.
Authors
- Siddharth Karkare (ORCID: https://orcid.org/0000-0002-7759-0032)
- Pramod Nimmatoori (ORCID: https://orcid.org/0009-0001-5072-730X)
- Ullattuparambil Anagha (ORCID: https://orcid.org/0009-0007-5111-8788)
- Jo Mama (ORCID: https://orcid.org/0009-0007-0677-3214)
- Peter Owusu (ORCID: https://orcid.org/0009-0001-6403-5419)
- Huai-Tei Yang (ORCID: https://orcid.org/0009-0004-8233-9872)
Institutions
- Arizona State University (US)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2026-11-02
- DOI
- https://doi.org/10.1063/5.0346151
- Primary Topic
- Photocathodes and Microchannel Plates
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- U.S. Department of Energy
- Taiwan Semiconductor Manufacturing Company