STRUCTURAL PROPERTIES OF In2O3 AND SnO2 FILMS OBTAINED BY MAGNETRON SPUTTERING
Wide-bandgap In2O3 and SnO2 oxide films were fabricated singmagnetron sputtering in an argon atmosphere. In2O3 (indium oxide) and SnO2 (tin oxide) films deposited on glass and silicon substrates were investigated. The atomic composition of tin in the doped oxide layer—specifically, indium tin oxide (ITO)—was determined. The electrical resistivity and carrier mobility values for the ITO films were measured. The structure of the oxides was analyzed via X-ray diffraction, and their structural properties were examined using a scanning electron microscope.
Authors
- Nurmatova Sevara
- Abrorjon Yuldashev
- Sultanpasha Muzafarova
Publication Details
- Journal
- Zenodo (CERN European Organization for Nuclear Research)
- Published
- 2026-11-01
- DOI
- https://doi.org/10.5281/zenodo.23860767
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00