Low-voltage, ultra-broadband wearable MEMS ultrasound: a frequency-merged, wafer-scale framework for continuous in vivo cardiovascular imaging and monitoring
Continuous, non-invasive monitoring of central hemodynamics is essential for advanced cardiovascular care. Although wearable ultrasound enables deep-tissue sensing, its widespread clinical adoption is limited by the inherent physical trade-off between driving voltage and acoustic bandwidth, alongside the challenges of scaling microelectronic ultrasound devices for medical imaging. Here, we report a wearable, 81.7% broadband piezoelectric micromachined ultrasonic transducer (pMUT) array driven at a low voltage of 5 Vp. To address these bottlenecks, this study introduces two parallel innovations. First, we introduce a novel frequency-merging design, quantified by an equivalent circuit model, to effectively decouple the voltage-bandwidth trade-off. Second, we provide a comprehensive framework directing a scalable silicon-on-insulator wafer-level fabrication process towards fully in vitro and in vivo experimental characterizations for medical imaging. Enabled by these advancements, in vitro characterization demonstrates 0.64 mm axial and 1.27 mm lateral resolutions while maintaining a penetration depth of up to 9 cm in wire phantoms. In vivo, the wearable patch achieves comparable high-fidelity B-mode and M-mode imaging of carotid, brachial, and radial arteries within 4 cm depth to commercial rigid probes. Crucially, the device enables continuous, stable hemodynamic monitoring under limited daily postural activities for up to 9 hours. Inter-subject validation confirms precise blood pressure measurements, with deviations of 2.2 mmHg compared to FDA-approved clinical monitors. Leveraging standard semiconductor batch manufacturing, this work addresses the technical mismatch between low-voltage wearable devices and high-performance ultrasound transduction, creating a feasible development path for highly integrated, mass-producible cardiovascular ultrasound systems-on-chip.
Authors
- Hang Gao (ORCID: https://orcid.org/0000-0003-4464-4572)
- Boyuan Wei
- Chengjun Huang (ORCID: https://orcid.org/0000-0003-4942-5432)
- Zijie Zhao (ORCID: https://orcid.org/0009-0004-9482-8315)
- Yang Jin
- Chenfang Yan
- Jiahan Yu (ORCID: https://orcid.org/0009-0008-6985-6903)
- 乔奕
- Tong Jin
- Yucheng Lin
- Jianwen Luo
- Rui Wang
- Lingqian Zhang
- Hongyang Chen
- Qiong He
Institutions
- Chinese Academy of Sciences (CN)
- Chinese PLA General Hospital (CN)
- Institute of Microelectronics (CN)
- University of Chinese Academy of Sciences (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Microsystems & Nanoengineering
- Published
- 2026-11-02
- DOI
- https://doi.org/10.1038/s41378-026-01451-6
- Primary Topic
- Advanced MEMS and NEMS Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China