Mechanical Control of Polar State in Antiferroelectric Order

ABSTRACT Antiferroelectric thin films can stabilize electrically written metastable polar states, but deterministic reset of these states after electrical writing remains challenging. Here, we demonstrate that localized mechanical force can deterministically erase an electrically written metastable polar state in epitaxial PbHfO 3 thin films, driving the system back toward the antipolar antiferroelectric ground state. Electrical bias stabilizes a persistent metastable polar state, whereas once the polar state is established, tip‐applied mechanical force progressively suppresses both piezoresponse and surface‐potential contrast, consistent with force‐assisted relaxation of the polar state toward the antiferroelectric state. Time‐dependent measurements further reveal that the written ferroelectric state is intrinsically metastable and relaxes only slowly without external perturbation. Together, these results demonstrate a deterministic electromechanical write–erase paradigm, in which electric fields encode, and mechanical forces erase ferroic order. This work introduces a new modality for controlling competing ferroic phases and provides a foundation for mechanically reconfigurable nanoelectronic and logic devices based on antiferroelectrics.

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Publication Details

Journal
Small
Published
2026-10-31
DOI
https://doi.org/10.1002/smll.76586
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
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article

Mechanical Control of Polar State in Antiferroelectric Order

Sujit Das, Zuhuang Chen, Anju Ahlawat, Garima Kaura et al.
Small
Ferroelectric and Negative Capacitance Devices
article

Mechanical Control of Polar State in Antiferroelectric Order

Sujit Das, Zuhuang Chen, Anju Ahlawat, Garima Kaura, Mohit Tanwani, Chhavi Rastogi
article en

Abstract

ABSTRACT Antiferroelectric thin films can stabilize electrically written metastable polar states, but deterministic reset of these states after electrical writing remains challenging. Here, we demonstrate that localized mechanical force can deterministically erase an electrically written metastable polar state in epitaxial PbHfO 3 thin films, driving the system back toward the antipolar antiferroelectric ground state. Electrical bias stabilizes a persistent metastable polar state, whereas once the polar state is established, tip‐applied mechanical force progressively suppresses both piezoresponse and surface‐potential contrast, consistent with force‐assisted relaxation of the polar state toward the antiferroelectric state. Time‐dependent measurements further reveal that the written ferroelectric state is intrinsically metastable and relaxes only slowly without external perturbation. Together, these results demonstrate a deterministic electromechanical write–erase paradigm, in which electric fields encode, and mechanical forces erase ferroic order. This work introduces a new modality for controlling competing ferroic phases and provides a foundation for mechanically reconfigurable nanoelectronic and logic devices based on antiferroelectrics.

Small
Harbin Institute of Technology (CN), SAGE University Indore (IN), Indian Institute of Science Bangalore (IN)
Openalex Percentile: Top 24%
Ferroelectric and Negative Capacitance Devices
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Mechanical Control of Polar State in Antiferroelectric Order — Sujit Das, Zuhuang Chen, et al. · Small (2026) | TGRS Research Map | TGRS