Thermalization-Controlled Superconducting Diode-Like Transport in Disordered Molybdenum and NbN Thin Films

Superconducting diode effects are characterized by direction-dependent critical currents in the superconducting state. Here, we investigate diode-like transport in 128-nm-thick Mo thin film deposited on Si_SiO2 substrate by DC magnetron sputtering. The thin film exhibit a superconducting transition temperature TC of 5.8 K. Pronounced current-direction asymmetry and hysteresis are observed in current-voltage characteristics measured in a closed-cycle refrigerator. In contrast, the same thin film exhibits a substantially more symmetric response in a 14T cryogenic system with improved sample thermalization. We attribute this strong dependence on the measurement environment to electrothermal effects arising from current-induced Joule heating and finite thermal relaxation. As the current approaches the superconducting-to-resistive switching condition, the emergence of a resistive component leads to a rapid increase in Joule heating, raising the sample temperature and modifying the switching condition. Conversely, during the resistive-to-superconducting transition, residual heating and finite thermal relaxation reduce the switching current. Since P is equal to I2R it is independent of current polarity, the observed asymmetry is not associated with polarity-dependent Joule heating but with the interplay of thermal relaxation, sweep history, and thermal boundary conditions. The suppression of the asymmetry under improved thermalization, together with similar behavior observed in NbN reference films, indicates that the apparent diode-like response is strongly influenced by electrothermal effects. These results highlight the need to distinguish thermal switching and hysteresis from intrinsic nonreciprocal superconductivity when identifying superconducting diode effects in transport measurements.