ELECTROPHYSICAL PROPERTIES OF WIDE-BANDGAP TIN DIOXIDE (SnO₂) FILMS

The article examines a method for fabricating thin SnO₂ metal oxide films using sol-gel technology. The optimal solution aging time for obtaining films with the best characteristics is justified. The properties of SnO₂ films are investigated to assess the possibility of using them as structural components of a transparent thin-film field-effect transistor.

Authors

Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2026-10-30
DOI
https://doi.org/10.5281/zenodo.23791664
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
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article

ELECTROPHYSICAL PROPERTIES OF WIDE-BANDGAP TIN DIOXIDE (SnO₂) FILMS

Yuldashev Abrorjon, Muzaffarova Sultanpasha, Nurmatova Sevara
Zenodo (CERN European Organization for Nuclear Research)
Thin-Film Transistor Technologies
article

ELECTROPHYSICAL PROPERTIES OF WIDE-BANDGAP TIN DIOXIDE (SnO₂) FILMS

Yuldashev Abrorjon, Muzaffarova Sultanpasha, Nurmatova Sevara
article en

Abstract

The article examines a method for fabricating thin SnO₂ metal oxide films using sol-gel technology. The optimal solution aging time for obtaining films with the best characteristics is justified. The properties of SnO₂ films are investigated to assess the possibility of using them as structural components of a transparent thin-film field-effect transistor.

Zenodo (CERN European Organization for Nuclear Research)
Openalex Percentile: Top 24%
Thin-Film Transistor Technologies
DOIOpen Access PDFOpenAlex
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ELECTROPHYSICAL PROPERTIES OF WIDE-BANDGAP TIN DIOXIDE (SnO₂) FILMS — Yuldashev Abrorjon, Muzaffarova Sultanpasha, et al. · Zenodo (CERN European Organization for Nuclear Research) (2026) | TGRS Research Map | TGRS