OPTICAL CHARACTERIZATION OF TIN SELENIDE (SNSE) THIN FILMS PREPARED BY THERMAL EVAPORATION FROM ELEMENTAL PRECURSORS (SE) AND (SN)

Tin selenide (SnSe) thin films with a thickness of ) were prepared by direct thermal evaporation of a mixture of its elemental precursors, Selenium (Se) and Tin (Sn), in a 1:1 molar ratio on glass substrates at room temperature. X-ray diffraction (XRD) and morphological analysis (SEM/AFM) confirmed that the as-deposited sample possesses a pure orthorhombic crystalline phase, whereas stepwise thermal treatment led to phase decomposition and impurity formation. Optical analysis revealed a high absorption coefficient () and two bandgaps: a direct gap of 1.42 eV and an indirect gap of 0.65 eV. The experimental results demonstrate the viability of these films as efficient, low-cost active materials for solar cell and broadband photodetector applications.

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Publication Details

Journal
Zenodo (CERN European Organization for Nuclear Research)
Published
2026-11-01
DOI
https://doi.org/10.5281/zenodo.23799774
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

OPTICAL CHARACTERIZATION OF TIN SELENIDE (SNSE) THIN FILMS PREPARED BY THERMAL EVAPORATION FROM ELEMENTAL PRECURSORS (SE) AND (SN)

Abdalmoaen Alales, Prof. Dr. Reiad Al-Abdallah, Prof. Dr. Ayman Ksibe
Zenodo (CERN European Organization for Nuclear Research)
Chalcogenide Semiconductor Thin Films
article

OPTICAL CHARACTERIZATION OF TIN SELENIDE (SNSE) THIN FILMS PREPARED BY THERMAL EVAPORATION FROM ELEMENTAL PRECURSORS (SE) AND (SN)

Abdalmoaen Alales, Prof. Dr. Reiad Al-Abdallah, Prof. Dr. Ayman Ksibe
article en

Abstract

Tin selenide (SnSe) thin films with a thickness of ) were prepared by direct thermal evaporation of a mixture of its elemental precursors, Selenium (Se) and Tin (Sn), in a 1:1 molar ratio on glass substrates at room temperature. X-ray diffraction (XRD) and morphological analysis (SEM/AFM) confirmed that the as-deposited sample possesses a pure orthorhombic crystalline phase, whereas stepwise thermal treatment led to phase decomposition and impurity formation. Optical analysis revealed a high absorption coefficient () and two bandgaps: a direct gap of 1.42 eV and an indirect gap of 0.65 eV. The experimental results demonstrate the viability of these films as efficient, low-cost active materials for solar cell and broadband photodetector applications.

Zenodo (CERN European Organization for Nuclear Research)
Openalex Percentile: Top 24%
Chalcogenide Semiconductor Thin Films
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