A rhombic spin-1 interpretation of a room-temperature GaN emitter

Single defects in GaN show optically detected magnetic resonance at room temperature. In the more abundant class, a minimal $S=3/2$ model leaves a $g\approx 4$ line unexplained. For one defect, this line lies near the sum of the two outer lines, consistent with transitions among three shared levels. A rhombic $S=1$ model reproduces the three line positions with rms errors of 8.1-9.8 MHz. The tested second-order $S=3/2$ fits containing all three transitions and the published minimal model do not reproduce these positions. A ladder fitted to the strong lines remains viable if the $g\approx 4$ line is a separate transition near the sum of the outer two. An unresolved frequency-window shift prevents the existing data from establishing the $S=1$ assignment uniquely. We propose a zero-field sweep that directly tests the isolated $S=1$ assignment.

Authors

Publication Details

Journal
arXiv (Cornell University)
Published
2026-10-29
DOI
https://doi.org/10.48550/arxiv.2610.39081
Primary Topic
GaN-based semiconductor devices and materials
Type
preprint
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preprint

A rhombic spin-1 interpretation of a room-temperature GaN emitter

Daniel Hashemi
arXiv (Cornell University)
GaN-based semiconductor devices and materials
preprint

A rhombic spin-1 interpretation of a room-temperature GaN emitter

Daniel Hashemi
preprint en

Abstract

Single defects in GaN show optically detected magnetic resonance at room temperature. In the more abundant class, a minimal $S=3/2$ model leaves a $g\approx 4$ line unexplained. For one defect, this line lies near the sum of the two outer lines, consistent with transitions among three shared levels. A rhombic $S=1$ model reproduces the three line positions with rms errors of 8.1-9.8 MHz. The tested second-order $S=3/2$ fits containing all three transitions and the published minimal model do not reproduce these positions. A ladder fitted to the strong lines remains viable if the $g\approx 4$ line is a separate transition near the sum of the outer two. An unresolved frequency-window shift prevents the existing data from establishing the $S=1$ assignment uniquely. We propose a zero-field sweep that directly tests the isolated $S=1$ assignment.

arXiv (Cornell University)
GaN-based semiconductor devices and materials
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