Thermal Stability of Near-60° Twisted MoS2 Bilayers with Implications for Twistronic Optoelectronic Devices

Abstract Twisted bilayers of transition metal dichalcogenides (TMDs) have attracted significant attention due to nanoscale exciton confinement within moiré superlattices, which opens pathways for twistronic optoelectronic devices, such as tunable light emitters and quantum-light sources. However, the properties of twisted bilayers are intrinsically dependent on the twist angle and on the nanoscale reconstruction of the moiré superlattice. Techniques capable of probing variations in the moiré structure are often impractical, including scanning probe microscopy (SPM) or transport measurements. The rapidly advancing field of twistronics demands versatile and fast tools to probe moiré variations, especially under variable temperature conditions relevant for device processing. Here, we employ Raman and photoluminescence (PL) spectroscopic mapping to probe local variations of the moiré-averaged response of twisted bilayer MoS2 with near-60° twist angle (TBM-n60) under different annealing temperatures. We observe the formation of reconstructed nanoscale domains after annealing at 200 °C, while sample degradation occurs at 400 °C. Our results shed light on the thermal stability of moiré structures, providing a practical and efficient approach to characterize temperature-induced changes in the moiré-averaged response, a prerequisite for reliable twistronic optoelectronic devices.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2026-10-30
DOI
https://doi.org/10.1021/acsanm.6c04396
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Thermal Stability of Near-60° Twisted MoS2 Bilayers with Implications for Twistronic Optoelectronic Devices

Andreij C. Gadelha, Rafael S. Alencar, A. G. Souza Filho, Ariete Righi et al.
2 links
ACS Applied Nano Materials
2D Materials and Applications
article

Thermal Stability of Near-60° Twisted MoS2 Bilayers with Implications for Twistronic Optoelectronic Devices

Andreij C. Gadelha, Rafael S. Alencar, A. G. Souza Filho, Ariete Righi, Takashi Taniguchi, Kenji Watanabe, Leandro M. Malard, Rafael R. Rojas-Lopez, Isaac Tavares, Karolline A. S. Araujo, Gabriel Borsoi, Gabriel G. A. Oliveira, Thiago Seniuk, Luciano F. D. Almeida, Isabela S. Silveira, Rubens E. D. Caram
article en

Abstract

Abstract Twisted bilayers of transition metal dichalcogenides (TMDs) have attracted significant attention due to nanoscale exciton confinement within moiré superlattices, which opens pathways for twistronic optoelectronic devices, such as tunable light emitters and quantum-light sources. However, the properties of twisted bilayers are intrinsically dependent on the twist angle and on the nanoscale reconstruction of the moiré superlattice. Techniques capable of probing variations in the moiré structure are often impractical, including scanning probe microscopy (SPM) or transport measurements. The rapidly advancing field of twistronics demands versatile and fast tools to probe moiré variations, especially under variable temperature conditions relevant for device processing. Here, we employ Raman and photoluminescence (PL) spectroscopic mapping to probe local variations of the moiré-averaged response of twisted bilayer MoS2 with near-60° twist angle (TBM-n60) under different annealing temperatures. We observe the formation of reconstructed nanoscale domains after annealing at 200 °C, while sample degradation occurs at 400 °C. Our results shed light on the thermal stability of moiré structures, providing a practical and efficient approach to characterize temperature-induced changes in the moiré-averaged response, a prerequisite for reliable twistronic optoelectronic devices.

ACS Applied Nano Materials
Universidade Federal de Minas Gerais (BR), National Institute for Materials Science (JP), Universidade Federal do Ceará (BR), Centro Brasileiro de Pesquisas Físicas (BR)
Ministry of Education, Culture, Sports, Science and Technology, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro, Fundação de Amparo à Pesquisa do Estado de Minas Gerais, Fundação Cearense de Apoio ao Desenvolvimento Científico e Tecnológico, Instituto Nacional de Ciência e Tecnologia em Nanomateriais de Carbono, Japan Science and Technology Agency, Core Research for Evolutional Science and Technology
Openalex Percentile: Top 29%
2D Materials and Applications
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