Hot Isostatic Pressing of Dissimilar 6063Al-SiC/Al and 6063Al-Si/Al Joints for Electronic Packaging: A Comparative Study of Microstructure and Mechanical Properties
Functionally graded Al-based joints are promising for electronic packaging, yet achieving reliable dissimilar layer bonding remains challenging. Here, we compare 6063Al-SiC/Al and 6063Al-Si/Al joints fabricated by hot isostatic pressing (HIP). Although both achieve defect-free bonding, but the SiC/Al joint exhibits a far higher tensile strength of 253 MPa and an interfacial shear strength of 203 MPa than the Si/Al joint, which reaches only 155 MPa and 48 MPa, respectively. This disparity stems from distinct interface evolution: the SiC/Al joint features an atomically bonded interface with high strain shielding efficiency, confining thermal mismatch strain to a narrow region of approximately 15 µm adjacent to the interface and protecting the 6063Al substrate. In contrast, Si particle fragmentation, imperfect interfaces, and low strain shielding efficiency in the Si/Al joint promote stress concentration and widespread substrate deformation, leading to premature failure with a brittle cleavage mode. These results demonstrate that reinforcement structural stability and strain shielding efficiency of the composite are crucial for the reliability of graded Al joints in electronic packaging.
Authors
- 刘彦强
- Chendong Kou
- Enze Diao (ORCID: https://orcid.org/0009-0008-4969-0811)
- Fan Jianzhong
- Yu Min (ORCID: https://orcid.org/0000-0002-0452-8166)
- Jie Fang
- Kun Zhang
Institutions
- China Electronics Technology Group Corporation (CN)
- General Research Institute for Nonferrous Metals (China) (CN)
- Grinm Advanced Materials (China) (CN)
- Southwest Jiaotong University (CN)
Publication Details
- Journal
- Materials
- Published
- 2026-10-30
- DOI
- https://doi.org/10.3390/ma19214595
- Primary Topic
- Electronic Packaging and Soldering Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00