Visible Light Accelerates Ultralow Electric Field‐Induced Switching of Antipolar‐to‐Polar Orders in Photoactive Ferroelectric

ABSTRACT Antiferroelectrics (AFEs) have emerged as intriguing electroactive materials due to their unique merits arising from electric field‐induced switching of antipolar‐to‐polar phases. For molecular AFEs, however, a high electric field strength is required to switch antipolar dipoles in adjacent sublattices because of complex intermolecular interactions. Herein, we propose visible‐light irradiation as a feasible strategy to accelerate electric field‐induced switching of antipolar‐to‐polar states in a photoactive AFE perovskite, (benzylammonium) 2 (ethylammonium)BiI 6 , with an ultralow coercive field. It is a multiaxial ferroelectric with large spontaneous polarization of 3.5 µC cm −2 . The cooperation of organic cation dynamics and inorganic octahedral distortion induces stepwise symmetry breaking in (benzylammonium) 2 (ethylammonium)BiI 6 , described by the point‐group sequence m ‐2/ m ‐3 m ‐ m . Strikingly, visible light accelerates its electric field‐induced AFE‐to‐ferroelectric switching; it shows near‐room‐temperature AFE behavior in the dark even under a high electric field, whereas visible‐light irradiation enables field‐induced ferroelectricity at an ultralow coercive field ( E c = 0.8 kV cm −1 , merely 1/39 of that in the dark). Nanoscale piezoresponse force microscopy studies further confirm this light‐accelerated polarization modulation, resembling an optical writing/reading memory process. This work provides a new pathway to modulate ferroic orders toward electronic device applications.

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Publication Details

Journal
Angewandte Chemie International Edition
Published
2026-10-30
DOI
https://doi.org/10.1002/anie.9374593
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Visible Light Accelerates Ultralow Electric Field‐Induced Switching of Antipolar‐to‐Polar Orders in Photoactive Ferroelectric

Junhua Luo, Mengyao Zhang, Jingtian Zhang, Zhihua Sun et al.
3 links
Angewandte Chemie International Edition
Ferroelectric and Piezoelectric Materials
article

Visible Light Accelerates Ultralow Electric Field‐Induced Switching of Antipolar‐to‐Polar Orders in Photoactive Ferroelectric

Junhua Luo, Mengyao Zhang, Jingtian Zhang, Zhihua Sun, Ji Qi, Linjie Wei, Liwei Tang, Yi Liu
article en

Abstract

ABSTRACT Antiferroelectrics (AFEs) have emerged as intriguing electroactive materials due to their unique merits arising from electric field‐induced switching of antipolar‐to‐polar phases. For molecular AFEs, however, a high electric field strength is required to switch antipolar dipoles in adjacent sublattices because of complex intermolecular interactions. Herein, we propose visible‐light irradiation as a feasible strategy to accelerate electric field‐induced switching of antipolar‐to‐polar states in a photoactive AFE perovskite, (benzylammonium) 2 (ethylammonium)BiI 6 , with an ultralow coercive field. It is a multiaxial ferroelectric with large spontaneous polarization of 3.5 µC cm −2 . The cooperation of organic cation dynamics and inorganic octahedral distortion induces stepwise symmetry breaking in (benzylammonium) 2 (ethylammonium)BiI 6 , described by the point‐group sequence m ‐2/ m ‐3 m ‐ m . Strikingly, visible light accelerates its electric field‐induced AFE‐to‐ferroelectric switching; it shows near‐room‐temperature AFE behavior in the dark even under a high electric field, whereas visible‐light irradiation enables field‐induced ferroelectricity at an ultralow coercive field ( E c = 0.8 kV cm −1 , merely 1/39 of that in the dark). Nanoscale piezoresponse force microscopy studies further confirm this light‐accelerated polarization modulation, resembling an optical writing/reading memory process. This work provides a new pathway to modulate ferroic orders toward electronic device applications.

Angewandte Chemie International Edition
Chinese Academy of Sciences (CN), Fujian Institute of Research on the Structure of Matter (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Natural Science Foundation of Fujian Province, Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China
Openalex Percentile: Top 29%
Ferroelectric and Piezoelectric Materials
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