Analysis of IGZO Surface Morphology Following Wet Etching

In this study, we investigated the effects of wet etching on the surface state of indium gallium zinc oxide (IGZO). The morphology of the IGZO surface changed after wet etching, resulting in the formation of granular protrusions. Additionally, the shape of these protrusions varied depending on the etching solution used. An investigation of the surface composition after wet etching revealed that the composition ratio of IGZO had changed. Furthermore, differences in this compositional variation were observed among the etching solutions. Based on these results, we elucidated the mechanisms behind the morphological changes of IGZO due to wet etching.

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Publication Details

Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2026-10-29
DOI
https://doi.org/10.4028/p-ktw2qm
Primary Topic
Thin-Film Transistor Technologies
Type
article
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article

Analysis of IGZO Surface Morphology Following Wet Etching

Tomoki Hirano, Suguru Saito, Kenya Nishio, Yoshiya Hagimoto et al.
1 links
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Thin-Film Transistor Technologies
article

Analysis of IGZO Surface Morphology Following Wet Etching

Tomoki Hirano, Suguru Saito, Kenya Nishio, Yoshiya Hagimoto, Kazuki Oshima
article en

Abstract

In this study, we investigated the effects of wet etching on the surface state of indium gallium zinc oxide (IGZO). The morphology of the IGZO surface changed after wet etching, resulting in the formation of granular protrusions. Additionally, the shape of these protrusions varied depending on the etching solution used. An investigation of the surface composition after wet etching revealed that the composition ratio of IGZO had changed. Furthermore, differences in this compositional variation were observed among the etching solutions. Based on these results, we elucidated the mechanisms behind the morphological changes of IGZO due to wet etching.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 395
Sony Semiconductor Solutions Corporation (Japan) (JP)
Openalex Percentile: Top 24%
Thin-Film Transistor Technologies
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