Analysis of IGZO Surface Morphology Following Wet Etching
In this study, we investigated the effects of wet etching on the surface state of indium gallium zinc oxide (IGZO). The morphology of the IGZO surface changed after wet etching, resulting in the formation of granular protrusions. Additionally, the shape of these protrusions varied depending on the etching solution used. An investigation of the surface composition after wet etching revealed that the composition ratio of IGZO had changed. Furthermore, differences in this compositional variation were observed among the etching solutions. Based on these results, we elucidated the mechanisms behind the morphological changes of IGZO due to wet etching.
Authors
- Tomoki Hirano
- Suguru Saito
- Kenya Nishio
- Yoshiya Hagimoto
- Kazuki Oshima
Institutions
- Sony Semiconductor Solutions Corporation (Japan) (JP)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-ktw2qm
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00