A Model for Estimating Metal Concentration on Si Substrates in IPA Drying Process
Metal adsorption during final drying process significantly affect the cleanliness of wafer. This study focused on the metal adsorption on Si substrate in actual IPA drying process by using single wafer cleaning equipment. The experimental results suggested a prediction model to explain the adsorption mechanism.
Authors
- Kuniko Teraki
- 絵理 藤田
- Kenjiro Takahashi (ORCID: https://orcid.org/0000-0001-9035-4619)
- Hao Chen (ORCID: https://orcid.org/0000-0001-9069-3290)
- Ayumi Higuchi
Institutions
- SCREEN Semiconductor Solutions Co., Ltd. (Japan) (JP)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-5bbn1q
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00