Hydrochloric Acid Treatment of InP Surfaces in N2-Controlled Atmosphere
The objective of this study is to investigate the oxide removal and the reoxidation mechanisms occurring on indium phosphide (InP) surfaces in a cleanroom environment after HCl wet treatments. For this purpose, an experimental setup was mounted, tuned and validated consisting of a glove box connected to a X-ray photoelectron spectroscopy (XPS) chamber, enabling quasi in-situ sample transfer after HCl wet treatment without any air exposure. We showed that a dip of at least 3 min in HCl with a concentration of at least 0.5% (0.137 mol/L) effectively removed indium phosphates (InPO x ) from InP surfaces. Reoxidation of HCl-treated InP surfaces was observed after more than 1 min of air exposure.
Authors
- Virginie Loup
- Victor Lumineau
- Bernard Pelissier
- Georges Al Hoyek
Institutions
- Centre National de la Recherche Scientifique (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-ixrbe3
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00