TiN Stepwise Etch for CFET Replacement Metal Gate Module
A TiN digital stepwise etch process is reported that could significantly simplify the monolithic Complementary Field Effect Transistor (mCFET) flow within the Replacement Metal Gate (RMG) Module. The process consists of repeated cycles of controlled TiN oxidation followed by selective oxide dissolution step. Various chemistries were screened for enabling controlled and selective TiN recess. Furthermore, we demonstrate that TiN cyclic etch does not damage the seam in between the nanoSheet (NS) in the CFET patterned structures.
Authors
- Hiroaki Arimura (ORCID: https://orcid.org/0000-0002-3138-708X)
- Ju-Geng Lai (ORCID: https://orcid.org/0000-0002-2794-8016)
- Efraín Altamirano Sánchez
- Camila Toledo de Carvalho Cavalcante
- Alina Arslanova (ORCID: https://orcid.org/0000-0001-8820-999X)
- Naoto Horiguchi (ORCID: https://orcid.org/0000-0001-5490-0416)
- Bonilla Ramirez
- S. Demuynck
- Luca Braile
Institutions
- IMEC (BE)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2026-10-29
- DOI
- https://doi.org/10.4028/p-n4h8p9
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission
- Vlaamse regering
- HORIZON EUROPE Framework Programme