Wet Process Development for Novel n-Type Dipole Materials ZrOx and YOx

We report on wet processing techniques developed for two novel n-type dipole materials, ZrO x and YO x . Through etching evaluations, H₂SO₄ and CO₂ water were identified as effective and selective etchants for ZrO x and YO x , respectively. The etching rate was sufficiently low (0.1 - 0.3 nm/min), enabling precise thickness control required for dipole tuning. Electrical characterization using MOS capacitors confirmed that these wet processes successfully removed dipole materials, recovering effective work function (EWF). These results demonstrate the feasibility of wet patterning for dipole-first integration and provide a foundation for scalable, thermally efficient multi-V t device fabrication.

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Journal
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Published
2026-10-29
DOI
https://doi.org/10.4028/p-58eh1i
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Wet Process Development for Novel n-Type Dipole Materials ZrOx and YOx

Hiroaki Arimura, Ju-Geng Lai, Yukifumi Yoshida, Dai Ueda et al.
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Semiconductor materials and devices
article

Wet Process Development for Novel n-Type Dipole Materials ZrOx and YOx

Hiroaki Arimura, Ju-Geng Lai, Yukifumi Yoshida, Dai Ueda, Naveen Krishna Reddy, Stephan Brus, Naoto Horiguchi, Hikaru Kawarazaki, Leo Lukose, Takayoshi Tanaka, Min Soo Kim
article en

Abstract

We report on wet processing techniques developed for two novel n-type dipole materials, ZrO x and YO x . Through etching evaluations, H₂SO₄ and CO₂ water were identified as effective and selective etchants for ZrO x and YO x , respectively. The etching rate was sufficiently low (0.1 - 0.3 nm/min), enabling precise thickness control required for dipole tuning. Electrical characterization using MOS capacitors confirmed that these wet processes successfully removed dipole materials, recovering effective work function (EWF). These results demonstrate the feasibility of wet patterning for dipole-first integration and provide a foundation for scalable, thermally efficient multi-V t device fabrication.

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaVol. 395
IMEC (BE), SCREEN Semiconductor Solutions Co., Ltd. (Japan) (JP)
European Commission, Vlaamse regering, HORIZON EUROPE Framework Programme
Openalex Percentile: Top 24%
Semiconductor materials and devices
DOIOpen Access PDFOpenAlex
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Wet Process Development for Novel n-Type Dipole Materials ZrOx and YOx — Hiroaki Arimura, Ju-Geng Lai, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (2026) | TGRS Research Map | TGRS